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pro vyhledávání: '"B. V. Orion"'
Publikováno v:
Soviet Physics Journal. 22:157-161
Electron-microscope investigations show that in the SiCl4,-H2 system at sufficiently high purity of the substrate surface and the gas-phase mixture in a low-temperature process, morphologically perfect epitaxial layers of silicon grow by a step-layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd4f23774d2bc6d1ac01b8d6c95e5d4
https://doi.org/10.1007/bf00892008
https://doi.org/10.1007/bf00892008
