Zobrazeno 1 - 5
of 5
pro vyhledávání: '"B. V. Orion"'
Publikováno v:
Soviet Physics Journal. 22:157-161
Electron-microscope investigations show that in the SiCl4,-H2 system at sufficiently high purity of the substrate surface and the gas-phase mixture in a low-temperature process, morphologically perfect epitaxial layers of silicon grow by a step-layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd4f23774d2bc6d1ac01b8d6c95e5d4
https://doi.org/10.1007/bf00892008
https://doi.org/10.1007/bf00892008
Publikováno v:
Technical Physics Letters. Oct98, Vol. 24 Issue 10, p810. 3p.
Publikováno v:
Soviet Physics Journal; 1979, Vol. 22 Issue 2, p157-161, 5p
Astrophysical analysis relating to solid matter requires data on properties and processes. Such data, however, expecially appropriate to space conditions are mostly lacking. It appeared then very tempting to gather together experimentalists, ob ser
