Zobrazeno 1 - 10
of 52
pro vyhledávání: '"B. Vögele"'
Autor:
H. P. Gislason, C B O'Donnell, Kevin Alan Prior, Christian Morhain, D. Seghier, B. C. Cavenett, B. Vögele
Publikováno v:
Journal of Crystal Growth. :482-486
The nitrogen acceptor in zinc-blende Zn 1− x Mg x Se alloys has been investigated using optical as well as DLTS spectroscopy. It is found that Mg incorporation in ZnSe : N leads to the formation of an AX-centre, consisting of a shallow quasi-effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b03fb4066d5fb4bf841d7d6e1211a5
https://doi.org/10.1016/s0022-0248(00)00135-4
https://doi.org/10.1016/s0022-0248(00)00135-4
Autor:
S. A. Telfer, B. Vögele, Christian Morhain, B. C. Cavenett, Bernhard Urbaszek, Kevin Alan Prior
Publikováno v:
Journal of Crystal Growth. :950-953
Zn 1− x Mg x Se-based heterostructures were grown by molecular beam epitaxy on (1 0 0) GaAs substrates. In this communication we report on the structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells and on the influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42df3120f101e6e8bb949f9945c6c8af
https://doi.org/10.1016/s0022-0248(98)01501-2
https://doi.org/10.1016/s0022-0248(98)01501-2
Autor:
C.R. Stanley, B. Vögele, H. Yaguchi, M. van der Burgt, E. A. Johnson, A. R. Long, John Singleton, E. Skuras, Martin Christopher Holland
Publikováno v:
Physical Review B. 59:10712-10718
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcecb1f874cbbd3854dc55246bb200c2
https://doi.org/10.1103/physrevb.59.10712
https://doi.org/10.1103/physrevb.59.10712
Publikováno v:
Journal of Crystal Growth. :37-40
We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::464f6ae56a9555a13a26637c0bdf62e5
https://doi.org/10.1016/s0022-0248(98)80289-3
https://doi.org/10.1016/s0022-0248(98)80289-3
Publikováno v:
Journal of Crystal Growth. :229-233
A study of Si spreading in δ-doped InGaAs grown lattice matched on InP by molecular beam epitaxy is reported. The layers were designed to distinguish between thermal diffusion and surface segregation as mechanisms for migration of the dopant atoms.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da12c027e3d2bd7a84729215216a161e
https://doi.org/10.1016/s0022-0248(96)00856-1
https://doi.org/10.1016/s0022-0248(96)00856-1
Publikováno v:
Applied Physics Letters. 71:2910-2912
Monolithic colliding pulse mode locking of a molecular beam epitaxy (MBE) grown GaAs/AlGaAs quantum well laser has been achieved through back doping of the active region to simulate the residual doping present in metal organic vapor phase epitaxy gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a43681e8b709b2db9816501815965a
https://doi.org/10.1063/1.120213
https://doi.org/10.1063/1.120213
Autor:
B. Vögele, L. C. Wilkinson, Andrew C. Walker, M. McElhinney, D. J. Goodwill, F. Pottier, C.R. Stanley, D.T. Neilson
Publikováno v:
Applied Physics Letters. 70:2031-2033
This letter describes the performance of electro-absorption optical modulator structures, based on strain-balanced InGaAs/AlGaAs p-i-n multiple quantum wells (MQWs). It specifically considers the influence of lattice mismatch with the graded InGaAlAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b718c978432eba7298f297bccb590589
https://doi.org/10.1063/1.118774
https://doi.org/10.1063/1.118774
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz-Keldysh band-edge shift produced by the electric fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::450fe4cb31f34b48f3ca7b2dafc4e675
https://doi.org/10.1109/cleoe.1994.636317
https://doi.org/10.1109/cleoe.1994.636317
Autor:
Ajoy K. Kar, B.S. Wherrett, B. Vögele, B.C. Cavenett, D.J. Bain, K.A. Prior, A. Tookey, I. Galbraith, G. Brown, I. J. Blewett
Publikováno v:
Technical Digest. 1998 EQEC. European Quantum Electronics Conference (Cat. No.98TH8326).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::844121cf3439dd9cff77fdab7c5f64c3
https://doi.org/10.1109/eqec.1998.715026
https://doi.org/10.1109/eqec.1998.715026
Publikováno v:
Applied Physics Letters. 65:1076-1078
Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz–Keldysh band‐edge shift produced by the electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be64697a4ded44fc711252349258403b
https://doi.org/10.1063/1.112130
https://doi.org/10.1063/1.112130