Zobrazeno 1 - 10
of 37
pro vyhledávání: '"B. Tsujiyama"'
Publikováno v:
IEEE Transactions on Electron Devices. 27:1284-1290
An automatic system for inspecting micro mask defects with 1-µm minimum detectable size has been developed. An outline of the system is as follows: The pattern image obtained with a pickup tube is converted into binary video signals which are transf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f577f85cca785e2385df24759f5c40f
https://doi.org/10.1109/t-ed.1980.20022
https://doi.org/10.1109/t-ed.1980.20022
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1825-1830
UV‐stimulated photocurrent spectroscopy and photocurrent transient methods have been used to determine the effects of deposition parameters on the electron trapping level density and its energy distribution in rf‐sputtered Ta2O5 films. Results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fa79a143c33bcfbdd4308ef79121df1
https://doi.org/10.1116/1.572222
https://doi.org/10.1116/1.572222
Publikováno v:
Journal of The Electrochemical Society. 131:2621-2625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346cb009bac0729ce3c657e905e174c9
https://doi.org/10.1149/1.2115371
https://doi.org/10.1149/1.2115371
Publikováno v:
Journal of The Electrochemical Society. 132:199-202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95d3b9b650472d3fca5a90dcc29dd7c7
https://doi.org/10.1149/1.2113761
https://doi.org/10.1149/1.2113761
Publikováno v:
IEEE Transactions on Magnetics. 13:982-988
A thin film of a new magnetooptical memory medium, Mn-Cu-Bi, was prepared on a glass disk and their dynamic memory characteristics were examined with an experimental rotating disk exerciser. The Curie temperature of the medium was about 200°C. Curie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64ccfcdca2131f7eeef6b3982fac491
https://doi.org/10.1109/tmag.1977.1059503
https://doi.org/10.1109/tmag.1977.1059503
Publikováno v:
IEEE Transactions on Magnetics. 8:603-605
A study has been made of a magnetooptic disk memory using MnBi thin films. The present experimental device is equipped with a MnBi medium vacuum deposited on a glass disk 139 mm in diameter and 20 mm thick, and with a rotation mechanism in which gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbb0e33c3dad042fc3c908beb6aff8f7
https://doi.org/10.1109/tmag.1972.1067482
https://doi.org/10.1109/tmag.1972.1067482
Publikováno v:
Chemischer Informationsdienst. 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce349aa4120b643c4dc2f7427df0e487
https://doi.org/10.1002/chin.198519013
https://doi.org/10.1002/chin.198519013
Publikováno v:
Chemischer Informationsdienst. 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d990019945ac6e3c3cd36345846fe326
https://doi.org/10.1002/chin.198511010
https://doi.org/10.1002/chin.198511010
Autor:
B. Tsujiyama, T. Unagami
Publikováno v:
IEEE Electron Device Letters. 3:167-168
A high voltage enhancement-type thin film transistor (TFT) has been fabricated on quartz in layers of laser-recrystallized polysilicon. The fabrication details and TFT characteristics are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6029d37cc6ab902a0adef2653e79ab50
https://doi.org/10.1109/edl.1982.25524
https://doi.org/10.1109/edl.1982.25524
Publikováno v:
IEEE Electron Device Letters. 5:197-198
Metal-gate thin-film transistors (TFT's) have been fabricated in layers of laser-recrystallized polycrystalline silicon on fused quartz substrates at processing temperatures below 625°C. Tantalum pentoxide (Ta 2 O 5 ) was used as a gate insulator in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a7679fee1172dea473e4dfd33368f12
https://doi.org/10.1109/edl.1984.25885
https://doi.org/10.1109/edl.1984.25885