Výsledky vyhledávání - "B. Tala-Ighil"

Analysis of Commercial Punch-Through IGBTs Behavior Under $^{60}$Co Irradiation: Turn-Off Switching Performances Evolution

Autor: Bertrand Boudart, A. Oukaour, B. Tala-Ighil, Hamid Gualous, M. Piccione, B. Pouderoux, J. L. Trolet

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. ⟨10.1109/TNS.2012.2216289⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. 〈10.1109/TNS.2012.2216289〉

This paper deals with the effects of 60Co gamma irradiation on punch-through commercial insulated gate bipolar transistors turn-off switching behavior. The response of the threshold voltage, the gate-emitter leakage current, the collector leakage cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cfe8bbd648441359f603f5fe1bcefba
https://hal.archives-ouvertes.fr/hal-01647617

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Operation Improvement of a High Voltage Series Resonant Supply

Autor: C. Glaize, B. Tala-Ighil, X. Tian

Publikováno v: Electric Machines & Power Systems. 20:527-538

This paper describes a method to eliminate the effects induced by the high voltage parasitic elements in a static resonant supply. This is done not by modifying the converter structure but by redefining the high voltage transformer structure. A high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9e695d0ad345445fb57da0996686325
https://doi.org/10.1080/07313569208909615

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Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

Autor: B. Boudart, H. Toutah, C.O. Maiga, B. Tala-Ighil

Publikováno v: 2005 European Conference on Power Electronics and Applications.

The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particula

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::494e2d188c001db8f69e2797b67a3633
https://doi.org/10.1109/epe.2005.219370

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Bipolar transistors under positive and negative gate bias stress

Autor: H. Toutah, B. Tala-Ighil, B. Boudart, C.O. Maiga

Publikováno v: Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005..

The work presented in this paper is concerned with the effects of a positive and of a negative gate bias stress on punch-through insulated gate bipolar transistors (PT-IGBT's). Two selections of PT IGBT's all of the same nominal range were gate biase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aca9e308bdca464d360de4d2666fddca
https://doi.org/10.1109/isie.2005.1528956

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Behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature gate bias stress

Autor: B. Tala-Ighil, B. Boudart, C.O. Maiga, H. Toutah

Publikováno v: 2004 IEEE International Symposium on Industrial Electronics.

The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) stress on punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs). A selection of PT IGBTs and a selection of NPT

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc7155440a9fe73e6f80de723b4c7b85
https://doi.org/10.1109/isie.2004.1571956

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