Zobrazeno 1 - 10
of 84
pro vyhledávání: '"B. Szentpali"'
Autor:
B. Szentpali
Publikováno v:
IEEE Sensors Journal. 7:1293-1299
The limitations of the performance of thermal resistors due to the electronic noises are investigated. Two applications of the thermistors are considered: the thermometer and the bolometer. The speed of the response of the probe is kept in mind in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00c492ccebe690beaf60254f363260e
https://doi.org/10.1109/jsen.2007.901267
https://doi.org/10.1109/jsen.2007.901267
Publikováno v:
Solid State Communications. 89:45-49
Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 microm, which correspond to the limits of the dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::105ddbf45d7e3fd9898ac1151d5734fc
https://doi.org/10.1016/0038-1098(94)90415-4
https://doi.org/10.1016/0038-1098(94)90415-4
Publikováno v:
Solid State Communications. 78:849-852
Drift mobility and electron concentration values in GaAs MESFETs obtained by capacitance-conductance measurements are corrected by means of a self-consistent iterative procedure. The final results are compared with the experimental Hall mobility data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82630065237e11630efc1330ef2210d5
https://doi.org/10.1016/0038-1098(91)90633-7
https://doi.org/10.1016/0038-1098(91)90633-7
Publikováno v:
Physica Status Solidi (a). 123:K79-K82
Etude des changements des caracteristiques courant-tension de ce materiau, prises a de faibles valeurs de U ds et a differentes temperatures de 100 a 294 K, apres irradiation avec des particules α de 2,84 MeV a 100 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48a7050c19d6f33323d4e60ec0434b3
https://doi.org/10.1002/pssa.2211230153
https://doi.org/10.1002/pssa.2211230153
Autor:
B. Szentpali
Publikováno v:
6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003..
The history of the metamaterial concept is outlined. The story started with the Institution of Veselago and continued almost thirty years later with the works of Pendry and co-workers. Their constructions resulting negative relative dielectric consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4317712b91627c327c8f234c042c0046
https://doi.org/10.1109/telsks.2003.1246199
https://doi.org/10.1109/telsks.2003.1246199
Autor:
B. Szentpali
Publikováno v:
4th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services. TELSIKS'99 (Cat. No.99EX365).
A mobile phone can emit a few watts of power in the vicinity of the human head. The paper reviews the different types of mobile phones, the related exposures, the assumed biological effects as well as the health safety recommendations and test method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ad1b2cee61381e121becdad59465f2
https://doi.org/10.1109/telsks.1999.804732
https://doi.org/10.1109/telsks.1999.804732
Autor:
B. Kovacs, B. Szentpali, V. van Tuyen, Zs. J. Horváth, A.I.A. Elsawirki, T. Veres, I. Csontos
Publikováno v:
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).
The thermal degradation of Al/Al/sub 0.20/Ga/sub 0.80/As Schottky junctions was studied up to 750/spl deg/C, by steps of 50/spl deg/C for 2 hours in forming gas. Current-voltage and capacitance-voltage measurements indicated, that the strong degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::505423156606ad43997f8169d609e943
https://doi.org/10.1109/asdam.1998.730182
https://doi.org/10.1109/asdam.1998.730182
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
The explosion-like spread of mobile telecommunication raises the problem of the exposure of the user to the electromagnetic field. The most realistic experimental investigations of the exposure can be made in phantoms. An E-Field probe has been devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c555dfecdd92c6dd3dfb51d018c9840
https://doi.org/10.1109/smicnd.1997.651196
https://doi.org/10.1109/smicnd.1997.651196
Autor:
Zs. J. Horváth, R. V. Konakova, N.L. Dmitruk, O.V. Rengevich, B. Szentpali, V. van Tuyen, S.V. Mamykin, Alexander Belyaev
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c7c782b06522dd14344a05063e1e4c
https://doi.org/10.1109/asdam.2000.889495
https://doi.org/10.1109/asdam.2000.889495
Autor:
Juraj Darmo, S. Hlavac, M. Krempasky, F. Dubecky, R. Senderak, Mária Sekáčová, B. Szentpali, Bohumír Zat’ko, M. Rucek, Vladimír Nečas
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
The basic problems and advantages related to spectrometric applications of GaAs-based radiation detectors for the X- and /spl gamma/-ray region are discussed. Two types of detectors are tested, based on (i) semi-insulating GaAs bulk substrate and (ii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e7905f5e06d0238c094b903ed5178f
https://doi.org/10.1109/asdam.2000.889548
https://doi.org/10.1109/asdam.2000.889548