Zobrazeno 1 - 10
of 99
pro vyhledávání: '"B. Sverdlov"'
Autor:
S. V. Tankeev, Llc «Intel Ross», A. E. Kolodin, Sverdlovsk Infrastructure directorate, V. B. Sverdlov, M. A. Konev, A. V. Nazarov
Publikováno v:
Herald of the Ural State University of Railway Transport. :4-13
The damage assessment of freight cars during shunting and loading and unloading operations was made. The need to review the normative documents regulating the relationship between the owners of rolling stock, owners of non-public tracks and the carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4966110a3a396e6c92e76f0474d5c5
https://doi.org/10.20291/2079-0392-2021-2-4-13
https://doi.org/10.20291/2079-0392-2021-2-4-13
Publikováno v:
Journal of Electronic Materials. 27:171-174
Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN have been studied by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n≥5×101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763af3b91406f31e4b741dcb285a6827
https://doi.org/10.1007/s11664-998-0381-z
https://doi.org/10.1007/s11664-998-0381-z
Publikováno v:
Solid-State Electronics. 41:169-175
GaN films with much improved structural, transport, and optical properties have been prepared by molecular beam epitaxy using NH3 as a nitrogen source. Films with a wide range of resistivity, including highly resistive ones, were grown with a chosen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d26a1301bf2fd5beecba5d5e79c956
https://doi.org/10.1016/s0038-1101(96)00160-8
https://doi.org/10.1016/s0038-1101(96)00160-8
Autor:
B. Sverdlov, A. Botchkarv, Hadis Morkoç, Jingyu Lin, Guangde Chen, M. Smith, Arnel Salvador, Hongxing Jiang
Publikováno v:
Journal of Applied Physics. 79:2675-2683
Continuous‐wave and time‐resolved photoluminescence spectroscopies have been employed to study the band‐edge transitions in GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. In addition to the neutral‐donor‐bound exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3da410aca5fe695bcbba6deec1b9f197
https://doi.org/10.1063/1.361138
https://doi.org/10.1063/1.361138
Publikováno v:
Journal of Applied Physics. 77:4455-4458
GaN growth mediated by electron cyclotron resonance activated nitrogen has been investigated under Ga and nitrogen rich conditions in a substrate temperature range of 650–850 °C. A biasable grid installed between the substrate and nitrogen flux al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a591be550a7515e3df0a41862ea64b7
https://doi.org/10.1063/1.359474
https://doi.org/10.1063/1.359474
Autor:
N. Lichtenstein, C. Button, J. Boucart, B. Sverdlov, Anthony Bertrand, E. A. Zibik, W. Kaiser, D. Inder, I. Davies, Yves Hernandez, A. Thies
Publikováno v:
ISLC 2012 International Semiconductor Laser Conference.
Wavelength stabilized single-mode lasers emitting in 1030–1070 nm spectral range and producing high power are required as a light seeding source for MOPA fiber laser systems. Fiber lasers in MOPA configuration operate either in CW or pulse mode usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aacb744cd3078163fc6192cd2c7879aa
https://doi.org/10.1109/islc.2012.6348326
https://doi.org/10.1109/islc.2012.6348326
Publikováno v:
Journal of Applied Physics. 76:1363-1398
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1690849764476832a150af7db8e81f
https://doi.org/10.1063/1.358463
https://doi.org/10.1063/1.358463
Publikováno v:
Proceedings of the IEEE. 81:493-556
Recent developments in strained layer epitaxial systems are reviewed. Their interest stems primarily from the additional degree of freedom that strained layers provide in the design of heterostructures and devices, which has led to device structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::227cb8b065453922b3ec350909286912
https://doi.org/10.1109/5.219338
https://doi.org/10.1109/5.219338
Autor:
B. Sverdlov, R. Todt, J. Boucart, A. Guarino, J. Mueller, N. Lichtenstein, M. Krejci, S. Pawlik
Publikováno v:
2009 High Power Diode Lasers and Systems Conference.
In this paper we present latest developments on devices at 800–1020nm with a peak wall plug efficiency 68% at 120W at 980nm. New applications are now driving the need for other wavelengths such as 790nm and 1400–1600nm. By using non wavelength sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80b22d1bcbe78c700af9e870b0cf5bc
https://doi.org/10.1109/hpd.2009.5362771
https://doi.org/10.1109/hpd.2009.5362771
Publikováno v:
Applied Physics Letters. 72:2132-2134
Decay of the longitudinal-optical (LO) phonons in wurtzite GaN has been studied by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that among the various possible decay channels, the LO phonons in wurtzite GaN decay prim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e214555ddf1e7e5ba970372e2390aebb
https://doi.org/10.1063/1.121299
https://doi.org/10.1063/1.121299