Zobrazeno 1 - 10
of 32
pro vyhledávání: '"B. Suchanek"'
Publikováno v:
Acta Physica Polonica A. 92:1001-1004
Electrical transport and ESR studies were performed on the state-of-the-art GaN 1ayers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2 x 10 17 cm-1 and mobility
Autor:
L. Shaginyan, Andrzej Wysmołek, B. Suchanek, Robert Dwilinski, Maria Kaminska, A. Żubka, W. Janik, S. Kwiatkowski
Publikováno v:
Acta Physica Polonica A. 88:1058-1062
Publikováno v:
Acta Physica Polonica A. 87:321-324
6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization e
Publikováno v:
Cast Metals. 3:157-162
A presentation is made of the influence of modification, using strontium and antimony, in changing the properties of cast aluminium alloys used in the production of automobile components. Research ...
Autor:
Jacek M. Baranowski, A. M. Witowski, B. Suchanek, Gerard Martinez, K. Pakua, Roman Stepniewski, P. Wyder, Marek Potemski, M. L. Sadowski
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Growth of GaN/Al2O3 layers by MOVPE has been investigated. Precise optimization of the growth parameters results in films with extremely high electron mobility: 900 cm2/Vs at 300K and 4000 cm2/Vs at 77K. The influence of the growth parameters on film
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Investigations of luminescence and ESR of silicon doped GaN layers are presented. The room temperature electron concentration in the investigated layers ranged from 1.7×1017 cm−3to 7×1018 cm−3. The layer with the highest electron concentration
Publikováno v:
Biological chemistry. 378(8)
In the mouse brain, the N-methyl-D-aspartate receptor subunit NR2C (epsilon-3) is mainly detected in the cerebellar granule cells starting from the second week of postnatal life. In order to improve our understanding of molecular mechanisms of this n
Publikováno v:
Zeitschrift für Pflanzenphysiologie. 84:369-371
Summary Plants of Amaranthus particulates , kept in a low (4 %) oxygen concentration show a remarkable increase in nitrate reductase activity. Compared with plants, grown in normal oxygen concentration, the difference in enzyme activity after 22 days
Autor:
Eliana Kamińska, S. Porowski, Jean Camassel, Piotr Perlin, Ryszard Piotrzkowski, B. Suchanek, Tadeusz Suski, Elzbieta Litwin-Staszewska, Izabella Grzegory, Jean-Claude Chervin, Wojciech Knap
Publikováno v:
Scopus-Elsevier
Infrared reflectivity and Hall effect measurements were performed on highly conducting n‐type GaN (n≊6×1019 cm−3) bulk crystals grown by the high‐pressure high‐temperature method. Values of electron‐plasma frequency and free‐electron c
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http://www.scopus.com/inward/record.url?eid=2-s2.0-36449008457&partnerID=MN8TOARS