Zobrazeno 1 - 10
of 30
pro vyhledávání: '"B. Simmnacher"'
Autor:
D. Wernicke, J. Jochum, J. Höhne, B. Simmnacher, M. E. Huber, Kevin Phelan, Franz von Feilitzsch, M. Stark, C. Hollerith, M. Bühler, W. Westphal, W. Weiland, Theo Hertrich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 520:606-609
Shrinking feature sizes in semiconductor device production as well as the use of new materials demand innovation in device technology and material analysis. X-ray spectrometers based on superconducting sensor technology are currently closing the gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043ef02cd3c1ff581931b46cc76467f3
https://doi.org/10.1016/j.nima.2003.11.327
https://doi.org/10.1016/j.nima.2003.11.327
Publikováno v:
Microelectronics Reliability. 43:1675-1680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f92dafa1df517e4d2aaaa5abb945dd
https://doi.org/10.1016/s0026-2714(03)00304-4
https://doi.org/10.1016/s0026-2714(03)00304-4
Autor:
C. Isaila, J. Höhne, Kevin Phelan, B. Simmnacher, R. Weiland, Franz von Feilitzsch, C. Hollerith, D. Wernicke
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 559:734-736
The combination of high-energy-resolution spectrometers with high-spatial-resolution scanning electron microscopes provides a powerful tool for material analysis. X-ray spectrometers based on superconducting transition edge sensors combine the advant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19353ffd5f19e6d28f195839ed8b700c
https://doi.org/10.1016/j.nima.2005.12.121
https://doi.org/10.1016/j.nima.2005.12.121
Autor:
P. Sadewater, Rudolf Schlangen, E. Le Roy, B. Simmnacher, Christian Boit, U. Kerst, T. Lundquist, R. Leihkauf
Publikováno v:
International Symposium for Testing and Failure Analysis.
The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1568ce6b7cffe180c5bc965b4de566c4
https://doi.org/10.31399/asm.cp.istfa2005p0064
https://doi.org/10.31399/asm.cp.istfa2005p0064
Autor:
J. Kaspar, G. Wald, K. Weber, K. Wiesinger, W. Rogge, A. Komposch, M. Leicht, J. Riss, B. Danzfuss, K.H. Muehlbacher, H. Geiger, T. Neidhart, B. Simmnacher, A. Stefaner, H. Pairitsch, G. Schagerl, T. Gross, H. Gruber, H. Peri, N. Dyroff, K. Sorschag, T. Gaertner, B. Mayer, H. Domes, T. Rupp, W. Wiebauer, J. Gatterbauer, S. Steinacher, A. Henoeckl, E. Trieblnig
Publikováno v:
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
Power processes are a challenge for 8-inch production especially in thermal processing. The temperatures exceed those used in DRAM and LOGIC by far and make a detailed knowledge of the critical process limits and maximum temperatures mandatory. We de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2553d86f5884ed0008c85f4b743094af
https://doi.org/10.1109/asmc.2004.1309529
https://doi.org/10.1109/asmc.2004.1309529
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
To achieve high breakdown voltages, power devices require a thick silicon layer with high resistivity. There are different concepts relating to how the electrical data of the devices can be optimized by a vertical inhomogenous carrier lifetime reduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d2145f5beea89c014b48df7acc1ed5
https://doi.org/10.1109/ispsd.1997.601464
https://doi.org/10.1109/ispsd.1997.601464
Publikováno v:
International Symposium for Testing and Failure Analysis.
Microcalorimeter based energy dispersive X-ray analysis (EDS) combines in a revolutionary way resolution of wavelength dispersive spectroscopy (WDS) with the ease of use of conventional EDS. The necessary operating temperatures (~100mK) for the super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c387a8bc4690bcb9c6981a208e6b808c
https://doi.org/10.31399/asm.cp.istfa2002p0087
https://doi.org/10.31399/asm.cp.istfa2002p0087
Autor:
J. Hohne, M. Buhler, F.V. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern, B. Simmnacher, R. Weiland, D. Wernicke
Publikováno v:
Proceedings of the 5th European Workshop on Low Temperature Electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e75c4263e917203bd0d9655404b348
https://doi.org/10.1109/wolte.2002.1022464
https://doi.org/10.1109/wolte.2002.1022464
Autor:
J. Jochum, F. v. Feilitzsch, Theo Hertrich, R. v. Hentig, C. Hollerith, B. Simmnacher, J. Höhne, U. Hess, K. Phelan, D. Wernicke, J. Nicolosi, R. Weiland, M. Bühler, D. Redfern, M. E. Huber
Publikováno v:
AIP Conference Proceedings.
The need to analyze small amounts of materials on surfaces e.g. in semiconductor industry drives the development of high resolution X-ray spectrometers based on superconducting detector technology. Since low excitation energies needed for high spatia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c151f97478933d2276e74e06692a6b2
https://doi.org/10.1063/1.1457662
https://doi.org/10.1063/1.1457662
Publikováno v:
SPIE Proceedings.
The answer of Failure Analysis (F/A) to the technological innovations in microelectronics in the past was: with a slight evolution (i.e. optical microscope -- SEM -- TEM) we can do it. The innovations around the corner today enforce a paradigm shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f83d92cbd739e227d8a6e87c4c938cc
https://doi.org/10.1117/12.425257
https://doi.org/10.1117/12.425257