Zobrazeno 1 - 10
of 79
pro vyhledávání: '"B. Sautreuil"'
Autor:
Sean T. Nicolson, Keith W. Tang, T. O. Dickson, P. Chevalier, B. Sautreuil, Sorin P. Voinigescu
Publikováno v:
Wireless Technologies ISBN: 9781315222318
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01bcd1339c6e0033df3484456cc7491f
https://doi.org/10.1201/9780849379970-14
https://doi.org/10.1201/9780849379970-14
Autor:
Alain Chantre, E. Dacquay, Sorin P. Voinigescu, Pascal Chevalier, A. Tomkins, E. Laskin, K.H.K. Yau, B. Sautreuil
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:813-826
A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, a noise equivalent power (NEP) of 14-18 fW/Hz1/2, and a temperature resolution better than 0.35 K for an integration time of 3.125 ms. The 1/f noise corner of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151240ed872d828634577e3c52e02bef
https://doi.org/10.1109/tmtt.2012.2184132
https://doi.org/10.1109/tmtt.2012.2184132
An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band
Autor:
Sorin P. Voinigescu, B. Sautreuil, I. Sarkas, S.T. Nicolson, A. Tomkins, E. Laskin, Pascal Chevalier
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:1968-1980
This paper describes a single-chip, 70-80 GHz wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gb/s. The peak gain of the z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c691a15b554a296e3bbe8308621205
https://doi.org/10.1109/jssc.2010.2058011
https://doi.org/10.1109/jssc.2010.2058011
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2206-2217
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, particularly within the automotive radar band of 77-81 GHz. A 1.3 mm times 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd946c28a8e4dce4cb428c0704cc9b4
https://doi.org/10.1109/jssc.2008.2002934
https://doi.org/10.1109/jssc.2008.2002934
Autor:
Pascal Chevalier, Patrice Garcia, V. Danelon, S.T. Nicolson, B. Sautreuil, Alain Chantre, Sorin P. Voinigescu, S. Pruvost, K.H.K. Yau
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:1092-1104
This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe BiCMOS technologies. The chipset includes a 123-mW single-chip receiver with 24-dB gain and an IP1 dB of -21.7 dBm at 76-GH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9577912aa6dea3186d1f97e3e8f9d1
https://doi.org/10.1109/tmtt.2008.921268
https://doi.org/10.1109/tmtt.2008.921268
Autor:
Sorin P. Voinigescu, Pascal Chevalier, K.W. Tang, Alain Chantre, B. Sautreuil, S.T. Nicolson, K.H.K. Yau
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:1821-1833
This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79922088f30f1bb9a80418299c3c9d3
https://doi.org/10.1109/jssc.2007.900769
https://doi.org/10.1109/jssc.2007.900769
Autor:
D. Rigamonti, Matteo Traldi, Alexis Farcy, Mark Andrew Shaw, Sebastien Cremer, Peng Sun, D. Ristoiu, P. Le Maitre, B. Orlando, Massimo Fere, H. Petiton, B. Sautreuil, C. Zaccherini, Thierry Pinguet, L. Salager, Frederic Boeuf, Attila Mekis, Nathalie Vulliet, Luigi Verga, Y. Chi, C. Elemi, Enrico Temporiti, Jean-Robert Manouvrier, Sébastien Jan, Gianlorenzo Masini, Luca Maggi, J.F. Carpentier, Charles Baudot
Publikováno v:
OFC
A low cost 28Gbits/s Silicon Photonics platform using 300mm SOI wafers is demonstrated. Process, 3D integration of Electronic and Photonic ICs, device performance, circuit results and low cost packaging are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6644c089160eb02377f9bd87abab606d
https://doi.org/10.1364/ofc.2015.w3a.1
https://doi.org/10.1364/ofc.2015.w3a.1
Autor:
Alexis Farcy, Philippe Delpech, Francois Leverd, Lucile Broussous, Sebastien Cremer, Remi Beneyton, Nathalie Vulliet, Ali Ayazi, Lieven Verslegers, D. Pelissier-Tanon, N-K Hon, T. Quemerais, L. Salager, Cedric Durand, Subal Sahni, E. Gourvest, P. De Dobbelaere, Olivier Gourhant, J.F. Carpentier, K. Haxaire, Yannick Sanchez, M. Fourel, P. Brun, C. Richard, Attila Mekis, Frederic Boeuf, M. Guillermet, D. Benoit, L. Pinzelli, Peng Sun, Y. Le-Friec, B. Sautreuil, Y. Chi, F. Battegay, B. Orlando, F. Baron, Daniel Gloria, E. Batail, Thierry Pinguet, D. Monnier, H. Petiton, D. Ristoiu, Jean-Robert Manouvrier, Gianlorenzo Masini, Sébastien Jan
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Recently Silicon Photonics has generated an outstanding interest for integrated optical communications. In this paper we describe a 300mm Silicon Photonics platform designed for 25Gb/s and above applications at the three typical communication wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a960f0db21112f5d1e743e8e26cef219
https://doi.org/10.1109/iedm.2013.6724623
https://doi.org/10.1109/iedm.2013.6724623
Autor:
Sorin P. Voinigescu, B. Sautreuil, A. Tomkins, Pascal Chevalier, Jurgen Hasch, Alain Chantre, E. Dacquay
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper investigates fundamental and push-push SiGe HBT voltage-controlled-oscillator topologies with and without doublers, as possible solutions for efficient milliwatt-level, low-noise signal sources at sub-millimeter wave frequencies. A fundame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e57cda3164d38a1eaa139e5bfc0cf9d8
https://doi.org/10.1109/bctm.2012.6352642
https://doi.org/10.1109/bctm.2012.6352642
Autor:
L. Tarnow, Sorin P. Voinigescu, A. Tomkins, Pascal Chevalier, B. Sautreuil, Andreea Balteanu, E. Laskin, Jurgen Hasch, E. Dacquay, I. Sarkas
Publikováno v:
2012 19th International Conference on Microwaves, Radar & Wireless Communications.
This paper reviews the design considerations, integration issues, packaging and experimental performance of two, recently developed D-Band transceivers with on-die or above-IC antennas fabricated in a production SiGe BiCMOS technology. Potential solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd10d7da9b3bfe623c14da4a918f020e
https://doi.org/10.1109/mikon.2012.6233499
https://doi.org/10.1109/mikon.2012.6233499