Zobrazeno 1 - 10
of 18
pro vyhledávání: '"B. Sanduijav"'
Publikováno v:
Applied Surface Science. 257:10465-10470
The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27f43939540cc88fa4b00d850b55b6d
https://doi.org/10.1016/j.apsusc.2011.06.162
https://doi.org/10.1016/j.apsusc.2011.06.162
Publikováno v:
Journal of Crystal Growth. 311:2220-2223
Molecular beam epitaxy of Si and Ge on the stripe-patterned Si (0 0 1) substrates is studied by scanning tunneling microscopy. The stripe patterns consist of one-dimensional etch grooves oriented along different azimuth directions within the Si (0 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d84dcda2ecf7bbe0cde87f56f4334d
https://doi.org/10.1016/j.jcrysgro.2008.12.004
https://doi.org/10.1016/j.jcrysgro.2008.12.004
Publikováno v:
Thin Solid Films. 517:293-296
Si growth on pit-patterned Si (001) substrates fabricated by electron beam lithography and reactive ion etching was studied by in situ scanning tunnelling microscopy. After reactive ion etching, the pits have cylindrical shape with vertical side wall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7302b8b803456100329de595a21ddce9
https://doi.org/10.1016/j.tsf.2008.08.120
https://doi.org/10.1016/j.tsf.2008.08.120
Autor:
Leo Miglio, Gunther Springholz, Matthew J. Beck, B. Sanduijav, Daniele Scopece, Francesco Montalenti, D. Matei, Gang Chen
Publikováno v:
Physical Review Letters. 108
Ge growth on high-indexed Si (1110) is shown to result in the spontaneous formation of a perfectly {105} faceted one-dimensional nanoripple structure. This evolution differs from the usual Stranski-Krastanow growth mode because from initial ripple se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00258df550bf0009d4261778f13b68f3
https://doi.org/10.1103/physrevlett.108.055503
https://doi.org/10.1103/physrevlett.108.055503
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1935-1941 (2010)
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1935-1941 (2010)
Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d37b058e784ef389e9f39f562bb0759
https://pubmed.ncbi.nlm.nih.gov/21170141
https://pubmed.ncbi.nlm.nih.gov/21170141
Publikováno v:
Physical Review B. 80
Si and Ge growth on the stripe patterned Si (001) substrates is studied using scanning tunneling microscopy. During Si buffer growth, the stripe morphology rapidly evolves from multifaceted ''U'' to ''V''-shaped forms. This involves successive transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a70bf3784fb937ac0d35cd1d36f4a72
https://doi.org/10.1103/physrevb.80.125329
https://doi.org/10.1103/physrevb.80.125329
Autor:
G. Vastola, Jian-Jun Zhang, Wolfgang Jantsch, Friedrich Schäffler, Gunther Springholz, Gang Chen, B. Sanduijav
Publikováno v:
Applied Physics Letters. 98:023104
The morphological and compositional evolution of {105}-bounded SiGe nanoripples on groove-patterned Si(1 1 10) substrates is reported for varying groove widths. Enhanced Si-Ge intermixing between the nanoripples and the groove sidewalls is interprete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f12c927baa0f1f10b4f5dcc6a23e9186
https://doi.org/10.1063/1.3541788
https://doi.org/10.1063/1.3541788
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