Zobrazeno 1 - 10
of 28
pro vyhledávání: '"B. S. Ong"'
PURPOSE As cancer surgery restarts after the first COVID-19 wave, health care providers urgently require data to determine where elective surgery is best performed. This study aimed to determine whether COVID-19–free surgical pathways were associat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::95a226e00e475e3e17a1e5e6c5b859b0
http://hdl.handle.net/11585/804886
http://hdl.handle.net/11585/804886
Autor:
Vernon J Lee, Jonathan Yap, Jimmy B S Ong, Kwai-Peng Chan, Raymond T P Lin, Siew Pang Chan, Kee Tai Goh, Yee-Sin Leo, Mark I-Cheng Chen
Publikováno v:
PLoS ONE, Vol 4, Iss 12, p e8096 (2009)
INTRODUCTION:Tropical regions have been shown to exhibit different influenza seasonal patterns compared to their temperate counterparts. However, there is little information about the burden of annual tropical influenza epidemics across time, and the
Externí odkaz:
https://doaj.org/article/aa8427977e9342daaf45b4c340cef002
Publikováno v:
Microwave and Optical Technology Letters. 7:827-831
The effects of using asymmetric phase shifts along the corrugation of a three-phase-shift (3PS) distributed feedback (DFB) laser diode (LD) have been investigated. Based on the transfer matrix method (TMM), design contours showing variations of the t
Autor:
D.A. Antoniadis, Kin Leong Pey, H. Cai, Chee Lip Gan, Chuan Seng Tan, B. S. Ong, Eugene A. Fitzgerald, C. Y. Ong
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Autor:
N, Venketasubramanian, B P L, Chan, E, Lim, Noor, Hafizah, K T, Goh, Y J, Lew, L, Loo, A, Yin, L, Widjaja, W C, Loke, G, Kuick, N L, Lee, B S, Ong, S F, Koh, B H, Heng, J, Cheah
Publikováno v:
Annals of the Academy of Medicine, Singapore. 31(4)
Disease management is an approach to patient care that coordinates medical resources for the patient across the entire healthcare delivery system throughout the lifetime of the patient with the disease. Stroke is suitable for disease management as it
Publikováno v:
Applied Physics Letters. 98:182102
We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The C
Autor:
B. S. Ong, Kin Leong Pey, H. Cai, Chuan Seng Tan, Chee Lip Gan, D.A. Antoniadis, C. Y. Ong, Eugene A. Fitzgerald
Publikováno v:
Electrochemical and Solid-State Letters. 13:H328
We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi 2 ) gate deposition on an Al 2 O 3 /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and ab
Autor:
C. M. Ng, H. Y. Zheng, C. P. Wong, L. Chan, C. Y. Ong, Zexiang Shen, Z. X. Xing, X. C. Wang, B. S. Ong, Kin Leong Pey
Publikováno v:
Electrochemical and Solid-State Letters. 13:H200
This work studies the use of pulsed laser annealing (LA) to realize high n-type dopant activation in GaAs. The results show that the defects induced by ion implantation can be effectively eliminated by pulsed LA. Besides preserving a good crystalline
Publikováno v:
Advanced Materials; May2005, Vol. 17 Issue 9, p1141-1144, 4p
Publikováno v:
The Journal of Organic Chemistry. 43:1526-1532