Zobrazeno 1 - 10
of 27
pro vyhledávání: '"B. S. MEYERSON"'
Autor:
B. S. Meyerson
Publikováno v:
IBM Journal of Research and Development. 44:132-141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ecd38f399bc143403b3a9bf1498713
https://doi.org/10.1147/rd.441.0132
https://doi.org/10.1147/rd.441.0132
Publikováno v:
Acta Physica Polonica A. 88:873-876
A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c7ea8b84d572669c2bd9a94559f1f8a
https://doi.org/10.12693/aphyspola.88.873
https://doi.org/10.12693/aphyspola.88.873
Autor:
K. Ismail, B. S. Meyerson
Publikováno v:
Journal of Materials Science: Materials in Electronics. 6:306-310
In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced electron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d868e02a1e5fcacd14862b98526ce23
https://doi.org/10.1007/bf00125885
https://doi.org/10.1007/bf00125885
Autor:
B. S. Meyerson, J Lutz, G. Stöger, F. Kuchar, Khalid EzzEldin Ismail, G. Bauer, G. Brunthaler
Publikováno v:
Semiconductor Science and Technology. 9:765-771
The energy loss rate of two-dimensional hot electrons has been studied in modulation-doped Si/SiGe heterostructures grown by ultrahigh-vacuum chemical vapour deposition using the damping of the amplitudes of Shubnikov-de Haas oscillations with applie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c69d9552acaab956cf8c43ed039f92
https://doi.org/10.1088/0268-1242/9/5s/100
https://doi.org/10.1088/0268-1242/9/5s/100
Publikováno v:
Thin Solid Films. 294:179-181
Quantum interference corrections to the magnetoresistance in one-sided modulation doped Si/SiGe quantum wells were investigated. From the weak localization effect, the temperature dependence of the phase coherence time is deduced and compared with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8b27dc0ac437e0f5b48e657f73d7d8
https://doi.org/10.1016/s0040-6090(96)09213-9
https://doi.org/10.1016/s0040-6090(96)09213-9
Publikováno v:
1995 53rd Annual Device Research Conference Digest.
High transconductance p-type field-effect transistors (FETs) are essential for the fabrication of high speed complementary circuits. Unfortunately, the much lower mobility of holes in comparison to electrons in Si has been responsible for the large g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47ce5b16c62d16fbb44a6357bda824b
https://doi.org/10.1109/drc.1995.496232
https://doi.org/10.1109/drc.1995.496232
Publikováno v:
Applied Physics Letters. 63:222-224
Far‐infrared measurements of the cyclotron resonance absorption of a two‐dimensional electron gas (2DEG) in a strained Si/SiGe heterostructure at low temperature (0.35–4 K) in the magnetic field range 2–14 T are reported. The effective mass w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7d436b7b097bb79d824a28d5d19b248
https://doi.org/10.1063/1.110347
https://doi.org/10.1063/1.110347
Publikováno v:
Applied Physics Letters. 62:1146-1148
The structure of a strain relief region between a Si substrate and a low dislocation density Ge film has been measured by Raman spectroscopy. The composition of the structure has been determined with ≂1000 A resolution in the growth direction, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0fee1869f221e6b69c9e53dd9c7e7e4
https://doi.org/10.1063/1.108770
https://doi.org/10.1063/1.108770
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2860
The authors present novel techniques for fabricating vertical silicon membranes having thicknesses below 100 nm and, in some cases, ∼40 nm. The combination of extreme membrane facet smoothness, near perfect parallelism, compatibility with epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ececb7122e5e1a58483837a3c2b753
https://doi.org/10.1116/1.585974
https://doi.org/10.1116/1.585974