Zobrazeno 1 - 6
of 6
pro vyhledávání: '"B. S. Chaudhari"'
Publikováno v:
Journal of Electrical Systems and Information Technology, Vol 7, Iss 1, Pp 1-13 (2020)
Abstract The advances in the image processing area demand for improvement in image segmentation methods. Effect of light and noise being ignored in image segmentation while tracing the objects of interest in addition to this texture is also one of th
Externí odkaz:
https://doaj.org/article/5e62f7a3ce274e8099555a1504a3996e
Publikováno v:
Journal of Electronic Materials. 52:3431-3435
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9788447f2090331f04716480798a0f24
https://doi.org/10.1007/s11664-023-10318-9
https://doi.org/10.1007/s11664-023-10318-9
Autor:
Kazuhito Yasuda, T. Kobayashi, H. Goto, Y. Higashira, Y. Agata, Ryo Torii, S. Fujii, R. Tamura, B. S. Chaudhari, Madan Niraula
Publikováno v:
Journal of Electronic Materials. 49:6996-6999
The properties of iodine-doped (211) CdTe layers grown on (211) Si substrates by metalorganic vapor-phase epitaxy at high substrate temperatures from 325°C to 450°C were studied. The growth rate of the doped layer increased with increasing substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b45d5dc8055fd1fa1738898798a1d1b
https://doi.org/10.1007/s11664-020-08420-3
https://doi.org/10.1007/s11664-020-08420-3
Publikováno v:
Journal of Applied Physics. 130:055302
Distribution and density of dislocations as a function of CdTe epilayer thickness as well as their effect on device dark current were studied using a p-CdTe/n-CdTe/n+-Si heterojunction diode type x-ray detector. A high dislocation density was found i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a786dd98a2afcaa3a4e3071632e05aa
https://doi.org/10.1063/5.0058504
https://doi.org/10.1063/5.0058504
Autor:
B. S. Chaudhari, T. P. Radhakrishnan
Publikováno v:
Materials Transactions, JIM. 34:443-449
The apparent hydrogen diffusivity data for pretreated pure iron and steel membranes have been analysed for hydrogen-trapping effects. Modified equations, valid for the appropriate boundary conditions of charging, have been derived to compute the trap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9ecba434287bb15b902550925aa347
https://doi.org/10.2320/matertrans1989.34.443
https://doi.org/10.2320/matertrans1989.34.443
Autor:
T. P. Radhakrishnan, B. S. Chaudhari
Publikováno v:
Zeitschrift für Physikalische Chemie. 146:241-241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9162ec7d1a82a2ba300b438fd34d2c94
https://doi.org/10.1524/zpch.1985.146.2.241
https://doi.org/10.1524/zpch.1985.146.2.241