DLTS Study of Room-Temperature Defect Annealing in High-Purity n-Type Si

Autor: Eduard Monakhov, J. H. Bleka, Bengt Gunnar Svensson, B. S. Avset

Publikováno v: ECS Transactions. 3:387-393

Deep-level transient spectroscopy (DLTS) measurements have been performed on p(+)-n(-)-n(+) Si-diode detectors produced from low-doped ([P] = 5 × 1012 cm-3), high-purity MCz-Si and Fz-Si wafers. After irradiation with 6-MeV electrons to a dose of 5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::735a2aa5c64828098c5f7965c443ccf6
https://doi.org/10.1149/1.2355773

End-user survey for digital sensor characteristics: a pilot questionnaire study

Autor: Renato Turchetta, Sergios Theodoridis, Geoffrey Hall, P.F. van der Stelt, J G C Verheij, Gang Li, Frixos A Triantis, F. Psomadellis, A. Galbiati, B. S. Avset, Robert D. Speller, R. Longo

Publikováno v: Dentomaxillofacial Radiology, 35, 147-151. British Institute of Radiology
Li, G, van der Stelt, P F, Verheij, H G C, Speller, R D, Galbiati, A, Psomadellis, F, Turchetta, R, Theodoridis, S, Hall, G, Avset, B S, Triantis, F A & Longo, R 2006, ' End-user survey for digital sensor characteristics: a pilot questionnaire study ', Dentomaxillofacial Radiology, vol. 35, pp. 147-151 . https://doi.org/10.1259/dmfr/54712734

To survey end-user opinions on dental digital sensor characteristics for the design of a new X-ray imaging sensor.100 questionnaires were sent out to dentists and dental radiologists. The questionnaire consisted of six parts related to dental sensors

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6395292c3004faf2ea3e4c91e38cf4ef
https://doi.org/10.1259/dmfr/54712734

Annealing of defects in irradiated silicon detector materials with high oxygen content

Autor: M. Mikelsen, Bengt Gunnar Svensson, Giovanni Alfieri, B. S. Avset, Jaakko Härkönen, Eduard Monakhov

Publikováno v: Journal of Physics: Condensed Matter. 17:S2247-S2253

A deep level transient spectroscopy (DLTS) study of electrically active defects in electron irradiated silicon detectors has been performed. Two types of materials have been studied and compared: carbon-lean magnetic Czochralski (MCZ-) Si, and high p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99b2af56a3734fd2752dab155586f3a3
https://doi.org/10.1088/0953-8984/17/22/012

Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si

Autor: Anders Hallén, B. G. Svensson, B. S. Avset, Giovanni Alfieri, Edouard Monakhov

Publikováno v: Journal of Physics: Condensed Matter. 15:S2771-S2777

Radiation-induced divacancy-related levels in high-purity oxygen-enriched n-type silicon have been studied with the use of deep level transient spectroscopy (DLTS) and Laplace-DLTS. It has been shown that heat treatment at 250°C results in a shift o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9bcd97c22025dbfb33aed60d9cf6a180
https://doi.org/10.1088/0953-8984/15/39/001

I-IMAS: A 1.5D sensor for high-resolution scanning

Autor: Sergios Theodoridis, B. S. Avset, M.J. French, Harris V. Georgiou, Robert D. Speller, Nikolaos Manthos, Gary Royle, Ioannis Evangelou, R. Turchetta, P. Gasiorek, Anna Bergamaschi, Geoff Hall, Dionisis Cavouras, F. Psomadellis, Gregory Iles, M. Noy, A. Fant, Renata Longo, A. Galbiati, P.F. van der Stelt, J. Jones, Frixos A Triantis, M Metaxas, Helene Schulerud, J.M. Ostby, C. Venanzi

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 573:27-29

We have developed a 1.5 D CMOS active pixel sensor to be used in conjunction with a scintillator for X-ray imaging. Within the Intelligent Imaging Sensors (I-ImaS) project, multiple sensors will be aligned to form a line-scanning system and its perfo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eed6840e94771d3e5a2bfcf52d518453
https://doi.org/10.1016/j.nima.2006.10.389