Zobrazeno 1 - 10
of 105
pro vyhledávání: '"B. Reuscher"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 315:126-130
The displacement of atoms in a magnetic trilayer Fe (10 nm)/Cr (0.7 nm)/Fe (10 nm) system by 30 keV Ga+ ion irradiation was studied by 3D Atom Probe Tomography (APT). From APT, the positions of individual Cr and Fe atoms could be located with sub-nm
Publikováno v:
Scripta Materialia. 67:838-841
Fatigue fracture surfaces of high-strength steels generated by a very high number of cycles to failure show so-called fine granular areas, for which the crack initiation and propagation mechanism is not fully understood. To clarify this mechanism of
Publikováno v:
Practical Metallography. 49:468-479
High-strength steels exhibit different fracture surface characteristics under cyclic load when failure is initiated by non-metallic inclusions depending on the lifespan. These can be attributed to different crack propagation mechanisms. These charact
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 285:142-147
The irradiation of glass surfaces by 30 keV Ga + ions under oblique incidence angles results in the development of “ripple”-like nanostructures. The evolution of these ripples was monitored in situ in the ion fluence range from 3 × 10 16 to 1 ×
Autor:
Bohra, Murtaza1 (AUTHOR), Giaremis, Stefanos2,3 (AUTHOR), KS, Abisegapriyan4 (AUTHOR), Mathioudaki, Stella5 (AUTHOR), Kioseoglou, Joseph2,3 (AUTHOR), Grammatikopoulos, Panagiotis4,6 (AUTHOR) panagiotis.g@gtiit.edu.cn
Publikováno v:
Advanced Science. 11/20/2024, Vol. 11 Issue 43, p1-30. 30p.
Focused ion beam implantation of Ga in Si and Ge: fluence-dependent retention and surface morphology
Publikováno v:
Surface and Interface Analysis. 40:1415-1422
Focused ion beam implantation of 30-keV Ga+ ions in single-crystalline Si and Ge was investigated by SIMS, using Cs+ primary ions for sputtering. Nine different implantation fluences ranging from 1 × 1013 to 1 × 1017 Ga+-ions/cm2 were used, with im
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:1666-1670
Focused ion beam implantation of 30-keV Ga + ions in nanocrystalline diamond films was investigated by secondary-ion mass spectrometry (SIMS), using Cs + primary ions for sputtering. Nine different implantation fluences ranging from 1 × 10 13 to 1
Publikováno v:
Physical Review B. 89
Glass surfaces were patterned by milling periodic trench structures with wavelengths from 150 to 750 nm in a focused ion-beam (FIB) system. Upon exposure to 30 keV Ga${}^{+}$ ion irradiation under an incidence angle of 52\ifmmode^\circ\else\textdegre
Autor:
M. Kopnarski, Alexander Brodyanski, S. Blomeier, Burkard Hillebrands, B. Reuscher, Patrizio Candeloro
Publikováno v:
Journal of Magnetism and Magnetic Materials. 310:2353-2355
We demonstrate that antiferromagnetically coupled Fe/Cr/Fe trilayers can be magnetically patterned on the micrometer and sub-micrometer scale by irradiation with keV Ga + ions, which induces a local transition to ferromagnetic coupling due to direct
Autor:
Michael Kopnarski, B. Reuscher, W. Bock, Burkard Hillebrands, Alexander Brodyanski, Hubert Gnaser, S. Blomeier
Publikováno v:
Physical Review B. 84
The influence of the ion irradiation by 30 keV Ga{sup +} ions on the crystal structure, chemical ordering, magnetic properties, and topography of epitaxial Fe/Cr/Fe trilayers was investigated by different analytical techniques. We present direct expe