Zobrazeno 1 - 10
of 800
pro vyhledávání: '"B. Rauschenbach"'
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045115-045115-7 (2017)
Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to eval
Externí odkaz:
https://doaj.org/article/a7b7bea794b1475c8c7c7d7ff5512e5c
Autor:
J. Lehnert, D. Spemann, S. Surjuse, M. Mensing, C. Grüner, P. With, P. Schumacher, A. Finzel, D. Hirsch, B. Rauschenbach
Publikováno v:
Journal of Physics: Conference Series. 992:012024
This work presents an investigation of carbon formed on polycrystalline Cu(111) thin films prepared by ion beam sputtering at room temperature on c-plane Al2O3 after thermal treatment in a temperature range between 300 and 1020°C. The crystallinity
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 72:937-940
The processes of nucleation and growth of GaN, Ge, and InAs nanoclusters in molecular beam epitaxy (conventional and nitrogen-ion-assisted) have been investigated by computer simulation methods. Physical models are proposed to explain the regularitie
Publikováno v:
IEEE Transactions on Plasma Science. 34:1136-1140
Very hard and wear-resistant layers are formed after energetic nitrogen insertion into stainless steel. Here, a systematic investigation of the influence of the microstructure is presented. Nitrogen implantation was performed in austenitic, martensit
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1344-1348
In this contribution results on self-organized patterns formed during low energy Xe+ ion beam erosion on Si and Ge surfaces are presented. It was found that the evolution of surface patterns depends on ion incidence angle, erosion time, and ion energ
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2299-2305
The local crystallographic texture and grain orientation was investigated for deposition of TiN by metal plasma immersion ion implantation & deposition (MePIIID) at different ion incident angles across one sample. A very good match between the tilt o
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 211:519-523
Heteroepitaxial GaN thin films implanted with Mg ions with a concentration of 1.3 × 1019 cm−3 are analyzed using in-situ X-ray diffraction in the temperature range of 20–700 °C. The temperature dependence of unstressed lattice parameters and st
Autor:
S. Mandl, B. Rauschenbach
Publikováno v:
IEEE Transactions on Plasma Science. 31:968-972
The homogeneity of metal plasma immersion ion implantation and deposition (MePIIID) was investigated for flat substrates and the materials systems Al, AlN, Ti, TiN, TiO/sub 2/, and ZnO. A shield was installed in the line-of-sight between the cathode
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:668-672
In the present work, titanium oxide layers formed by plasma immersion ion implantation are investigated by elastic recoil detection analysis (ERDA), and spectroscopic ellipsometry (SE). Good agreement for the layer thickness is obtained when addition
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:663-667
Formation of hard ceramic surface layer by metal plasma immersion ion implantation and deposition (MePIIID) can be a quite complex process as quite a number of different species, including condensable metallic ions, electrons and neutral gas, which c