Zobrazeno 1 - 10
of 17
pro vyhledávání: '"B. R. Marathe"'
Autor:
C Agashe, B R Marathe
Publikováno v:
Journal of Physics D: Applied Physics. 26:2049-2054
SnO2:F films of thicknesses up to 0.5 mu m were deposited by spray pyrolysis on different substrates-Corning 7059, soda-lime glass, Si(111), polycrystalline silicon and amorphous silicon. The influence of film thickness, as well as the substrate natu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eec54a97d7d1603cb920775237d444e
https://doi.org/10.1088/0022-3727/26/11/032
https://doi.org/10.1088/0022-3727/26/11/032
Publikováno v:
International Journal of Electronics. 41:273-283
The capacitance-voltage technique has been employed to study the instability phenomenon in silicon dioxide films, intentionally contaminated with water vapour. The temperature, voltage and time dependence on initial drift and recovery waveform are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45afa9417db08981c47fb8f0b9868116
https://doi.org/10.1080/00207217608920635
https://doi.org/10.1080/00207217608920635
Publikováno v:
IETE Journal of Research. 20:602-606
Results on the selective etching of a two layer system (resistive layer and conductive layer) on glass substrates to achieve resistors/resistor-networks have been described. This method is compared with the earlier used methods. The method reported i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb045a082df9132dacfacee682e520b
https://doi.org/10.1080/03772063.1974.11487489
https://doi.org/10.1080/03772063.1974.11487489
Autor:
B. R. Marathe
Publikováno v:
IETE Journal of Research. 24:213-218
Thick-film hybrid technology provides a high degree of flexibility in the design and fabrication of electronic circuits. This has resulted in wider applications of this technology. Present research is directed towards search for new substrate materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766ecbec27f0ff93780597466e2b8966
https://doi.org/10.1080/03772063.1978.11451619
https://doi.org/10.1080/03772063.1978.11451619
Publikováno v:
Physica Status Solidi (a). 19:K143-K147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45659ff5aa127a5e3b96fc3f547d18fa
https://doi.org/10.1002/pssa.2210190253
https://doi.org/10.1002/pssa.2210190253
Publikováno v:
IETE Journal of Education. 10:176-179
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc974b466a1f6921ebe9ebfecde27f6
https://doi.org/10.1080/09747338.1969.11449953
https://doi.org/10.1080/09747338.1969.11449953
Autor:
Jaipal Singh, B. R. Marathe
Publikováno v:
IETE Journal of Research. 12:621-625
In connection with the programme of work on the fabrication of planar transistors and integrated circuits, diffusion of phosphorus in a graded p-type layer has been studied.Impurity concentration profile in the p-type graded layer has been determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d30a1367b965d240eb26cee4e591b2
https://doi.org/10.1080/03772063.1966.11485387
https://doi.org/10.1080/03772063.1966.11485387
Autor:
B. R. Marathe
Publikováno v:
IETE Journal of Research. 16:744-749
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22f7ced99322b9fa8a933e64266d0f7
https://doi.org/10.1080/03772063.1970.11486661
https://doi.org/10.1080/03772063.1970.11486661
Autor:
B R Marathe
Publikováno v:
Proceedings of the Physical Society. 79:503-506
A.C. field effect measurements on fast surface states on Si are not possible because the minimum of conductance cannot be observed. The pulsed field effect measurements and the flattening of the a.c. field effect curve are utilized in attempting to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7ce49cfc9f0d6b3ba0d6fbfbc01f9b7
https://doi.org/10.1088/0370-1328/79/3/308
https://doi.org/10.1088/0370-1328/79/3/308
Publikováno v:
IETE Journal of Research. 19:481-484
One of the major defects in the photolithographic step used in planar technology is the pinholes in the oxide which can result in device failure due to metallization shorts. This type of defect is one of the important factors responsible for the low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c506e9f6f1bc71980767ae8a34ae771
https://doi.org/10.1080/03772063.1973.11487239
https://doi.org/10.1080/03772063.1973.11487239