Zobrazeno 1 - 10
of 23
pro vyhledávání: '"B. Qu'Hen"'
Autor:
Robert Triboulet, A. Rivière, Eric Tournié, J.O. Ndap, A. Zozime, B Qu'hen, Gérard Neu, Alain Lusson, P Lemasson, S. Fusil, G. Geoffroy
Publikováno v:
Materials Letters. 36:162-166
New results are given on the solid phase recrystallization growth of ZnSe. The orientation relationship between initial texture of the starting material and SPR grown crystals is studied by X-ray diffraction. Twins are shown to be already present in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d75788eb91b020b913e6e648e1053e
https://doi.org/10.1016/s0167-577x(98)00020-2
https://doi.org/10.1016/s0167-577x(98)00020-2
Publikováno v:
Journal of Crystal Growth. 159:138-143
The pyrolysis of methylallyltellurium has been studied in an isothermal flow-tube reactor. The reaction products in H 2 and He carrier gases were analyzed using a quadrupole mass spectrometer. We compared MeTe-allyl decomposition kinetics with the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a6d43e9aabf520fa12b18af900be036
https://doi.org/10.1016/0022-0248(95)00848-9
https://doi.org/10.1016/0022-0248(95)00848-9
Publikováno v:
Journal of Crystal Growth. 146:580-586
The kinetic growth limitation in atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) of ZnSe was investigated using the selenium precursors methylallylselenide (MASe) and ditertiarybutylselenide (DTBSe). The onset of mass transfer limited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd9da063d95190eede1b22b695c1433
https://doi.org/10.1016/0022-0248(94)00542-7
https://doi.org/10.1016/0022-0248(94)00542-7
Autor:
Wolfgang Gebhardt, Hans Peter Wagner, M. Wörz, H. Dumont, C. Grattepain, Ouri Gorochov, B. Qu'Hen, K. Wolf, Andreas Rosenauer, Alain Lusson, W.S. Kuhn, T. Reisinger, S. Bauer, H. Stanzl
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:119-177
The crystalline structure, surface morphology, optical properties and purity of ZnTe layers grown by MOVPE were investigated. Various substrates, different combinations of metalorganics and various growth conditions were studied. The results of three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c34952aec6763141f1c49db15baec3
https://doi.org/10.1016/0960-8974(95)00018-6
https://doi.org/10.1016/0960-8974(95)00018-6
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:1-44
The growth of high quality II-VI devices by MOVPE is dependent upon the progress achieved in certain key research activities. Here, the precursors are the crucial point for a successful epitaxy. The metallorganics Et 2 Te, i Pr 2 Te, MeTe-allyl, Et 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0bb6acbd9d39748f981ffbd452706f9
https://doi.org/10.1016/0960-8974(95)00016-x
https://doi.org/10.1016/0960-8974(95)00016-x
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:45-117
We report on the MOVPE of ZnTe in two typical reactor geometries. Horizontal flow in rectangular tubes with even and tilted susceptors are compared with axisymetric vertical downward flow arrangements on even (horizontal) and tilted susceptors. Growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0557fe196f8831f20367d10563e977
https://doi.org/10.1016/0960-8974(95)00017-8
https://doi.org/10.1016/0960-8974(95)00017-8
Publikováno v:
Journal of Crystal Growth. 145:541-546
We report on metalorganic vapour phase epitaxy (MOVPE) growth of the IIa-VI compound MgTe and the variable band gap ternary semiconductor Zn 1−x Mg x Te. Bulk MgTe shows wurtzite type structure and is a direct band gap material (∼3.5 eV). The pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05b1b9c370b22d765cb08c9dc60dc6a
https://doi.org/10.1016/0022-0248(94)91104-5
https://doi.org/10.1016/0022-0248(94)91104-5
Autor:
K. Wolf, Wolfgang Gebhardt, B. Qu'Hen, C. Grattepain, H. Sahin, W.S. Kuhn, Ouri Gorochov, Alain Lusson, H. Stanzl, L. Svob, R. Driad, X. Quesada
Publikováno v:
Journal of Crystal Growth. 138:448-454
The impurities in ZnSe layers grown by metalorganic vapour phase epitaxy (MOVPE) on (001) GaAs have been investigated by photoluminescence (PL) and secondary ion mass spectrometry (SIMS) measurements. The layers grown with the alkyl combination methy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68597522b2cdea2e93a4e15e6fb0dd8b
https://doi.org/10.1016/0022-0248(94)90849-4
https://doi.org/10.1016/0022-0248(94)90849-4
Publikováno v:
Thin Solid Films. 241:370-373
Photoassisted epitaxy of ZnTe on GaAs by a metal organic vapour-phase process has been performed using sources of diethylzinc and diethyltellurium or diisopropyltellurium. Illuminating the layer during growth with a xenon lamp increases the growth ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8885e27219b8fb9836583519fa97bd2e
https://doi.org/10.1016/0040-6090(94)90460-x
https://doi.org/10.1016/0040-6090(94)90460-x
Publikováno v:
Applied Organometallic Chemistry. 8:87-93
A kinetic model for the metal organic chemical vapour deposition (MOCVD) growth of ZnTe is presented, taking into account the competitive adsorption of organometallic precursors. By assuming that diethylzinc (DEZn) and diethyltellurium (DETe) or di-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206accd0ffd0533eb0b1183e1f14f095
https://doi.org/10.1002/aoc.590080202
https://doi.org/10.1002/aoc.590080202