Zobrazeno 1 - 10
of 16
pro vyhledávání: '"B. Prasanna Lakshmi"'
Autor:
B. Prasanna Lakshmi
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 6:2941-2952
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297fe8ff49b124174c285a554bf7d197
https://doi.org/10.22214/ijraset.2018.1404
https://doi.org/10.22214/ijraset.2018.1404
Autor:
B. Prasanna Lakshmi
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 6:2930-2940
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c83a478e0056349cf50ee25483f80b09
https://doi.org/10.22214/ijraset.2018.1403
https://doi.org/10.22214/ijraset.2018.1403
To solve the energy consumption demand of the world and environmental problems in the future the distributed generation is considered an alternative approach. In this paper a new passive islanding detection technique was proposed for the Hybrid distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75f92786ecc4d7d5486185da90f3dbc5
https://zenodo.org/record/4422114
https://zenodo.org/record/4422114
Autor:
J. Rajesh Reddy, B Neelima Devi, B. Prasanna Lakshmi, R. Dhanasekaran, Rami Reddy Ch, A. Pandian
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 17:1626
Grid integration of non conventional energy resources is increasing in day to day life to supply the global energy utilization requirement. The major problem with such integrated Distributed Generation (DG) is islanding. The islanding is originated i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae76915223ac4afeeed6b7e7a7c269e3
https://doi.org/10.11591/ijeecs.v17.i3.pp1626-1631
https://doi.org/10.11591/ijeecs.v17.i3.pp1626-1631
Autor:
C. Usha Kiran, B. Prasanna Lakshmi
Publikováno v:
Journal of Nurse Midwifery and Maternal Health. 2:163-168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469c196bc393ba2d3b5e98cfab13f30b
https://doi.org/10.21088/jnmmh.2454.7506.2316.4
https://doi.org/10.21088/jnmmh.2454.7506.2316.4
Publikováno v:
Superlattices and Microstructures. 60:358-369
We report on the capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of Ir/n-InGaN Schottky diode with various biases and at different temperature. Investigations reveal that the capacitance is almost independent of te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017f4935235598d92741341ad7fe1d56
https://doi.org/10.1016/j.spmi.2013.05.014
https://doi.org/10.1016/j.spmi.2013.05.014
Publikováno v:
Applied Physics A. 113:713-722
We report on the effect of an annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal–insulator–semiconductor (MIS) structure by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The measured Schottky ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c55f1e1b645a82e9a6acb6c62e8739
https://doi.org/10.1007/s00339-013-7797-x
https://doi.org/10.1007/s00339-013-7797-x
Publikováno v:
Superlattices and Microstructures. 56:64-76
The effect of annealing temperature on interface properties of iridium/ruthenium (Ir/Ru) Schottky contacts on n-type InGaN have been investigated by current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES) and X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c24ca27f39df7fce8a466951cdd106a
https://doi.org/10.1016/j.spmi.2012.12.016
https://doi.org/10.1016/j.spmi.2012.12.016
Publikováno v:
Current Applied Physics. 12:765-772
The temperature-dependent electrical properties of Au/SiO 2 /n-GaN metal-insulator-semiconductor (MIS) structure have been investigated in the temperature range of 120–390 K. Anomalous strong temperature dependencies of the barrier height ( Φ bo )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd4e8ec07fc3df124a19e4d19159de4
https://doi.org/10.1016/j.cap.2011.11.002
https://doi.org/10.1016/j.cap.2011.11.002
Publikováno v:
Journal of Alloys and Compounds. 509:8001-8007
In the present work, we have investigated the current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of Au/SiO 2 /n-GaN metal–insulator–semiconductor (MIS) Schottky diode and compared with Au/n-GaN metal–semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7fd0ea4be0f329253f4f3db5b6805a
https://doi.org/10.1016/j.jallcom.2011.05.055
https://doi.org/10.1016/j.jallcom.2011.05.055