Zobrazeno 1 - 10
of 20
pro vyhledávání: '"B. Patzold"'
Autor:
Lukas M. Eng, P. Steinke, Konrad Seidel, B. Patzold, Malte Czernohorsky, Maximilian Lederer, Tarek Ali, Robert Binder, David Lehninger, Ricardo Olivo, Matthias Rudolph, Johannes Müller, Joachim Metzger, Thomas Kampfe, Kati Kühnel, R. Hoffmann, F. Muller, C. Mart
Publikováno v:
IEEE Transactions on Electron Devices. 67:2793-2799
We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (− 40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature. The memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d703ee8f716e9ab26f03e5032129473
https://doi.org/10.1109/ted.2020.2996582
https://doi.org/10.1109/ted.2020.2996582
Autor:
Matthias Rudolph, Maximilian Lederer, C. Mart, Ricardo Olivo, Robert Binder, Lukas M. Eng, B. Patzold, P. Steinke, Konrad Seidel, R. Hoffmann, F. Muller, Kati Kühnel, Tarek Ali, Thomas Kampfe, Malte Czernohorsky, Johannes Müller, Joachim Metzger, David Lehninger
Publikováno v:
IEEE Transactions on Electron Devices. 67:2981-2987
We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on the FeFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d8a716546cac7c51c7197115461bf2
https://doi.org/10.1109/ted.2020.2995781
https://doi.org/10.1109/ted.2020.2995781
Autor:
R. Hoffmann, Malte Czernohorsky, Kati Kühnel, Johannes Müller, Franz Muller, Maximilian Lederer, M. N. Kalkani, Lukas M. Eng, B. Patzold, Matthias Rudolph, J. Van Houdt, P. Steinke, David Lehninger, Konstantin Mertens, R. Olivo, Tarek Ali, Konrad Seidel, Thomas Kampfe, C. Mart
Publikováno v:
IRPS
The impact of the ferroelectric (FE) wakeup phenomenon on the reliability of fluorite structure-based laminated Si-doped hafnium oxide (HSO) FeFET memory cells is reported. The post wakeup cycling shows a strong change in the optimal program/erase (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d466aab455058662a0a601067168de20
https://doi.org/10.1109/irps45951.2020.9128337
https://doi.org/10.1109/irps45951.2020.9128337
Autor:
D. A. Lohr, Matthias Rudolph, Konrad Seidel, R. Hoffmann, Kati Kühnel, Tarek Ali, Johannes Müller, Stefan Riedel, Thomas Kampfe, Malte Czernohorsky, P. Polakowski, P. Steinke, B. Patzold, K. Zimmermann, Jesús Calvo, T. Buttner
Publikováno v:
IEEE Transactions on Electron Devices. 65:3769-3774
We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the permit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::072ffeb632985dcd7584c5503a4d8376
https://doi.org/10.1109/ted.2018.2856818
https://doi.org/10.1109/ted.2018.2856818
Autor:
David Lehninger, Matthias Rudolph, P. Steinke, Malte Czernohorsky, Tarek Ali, Konrad Seidel, Johannes Müller, R. Hoffmann, Franz Muller, U. Muhle, B. Patzold, Thomas Kampfe, Kati Kühnel, K. Zimmermann, P. Polakowski, R. Olivo, Maximilian Lederer
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 104 endurance are reported. The gate stack lamin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7866dab9eb0e561dfbf3cd694f2591
https://doi.org/10.1109/iedm19573.2019.8993642
https://doi.org/10.1109/iedm19573.2019.8993642
Autor:
B. Patzold, Kati Biedermann, Malte Czernohorsky, Konrad Seidel, R. Hoffmann, K. Zimmermann, J. Van Houdt, Tarek Ali, Kati Kühnel, Matthias Rudolph, P. Steinke
Publikováno v:
NVMTS
The utilization of FeFET technology in NAND based architectures is dependent on the role of pass voltage disturb of pass cells during the readout of selected cells. This disturb effect becomes dependent on the FeFET stack parameters and potential opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3261276fc180bb6990483f79ae101498
https://doi.org/10.1109/nvmts47818.2019.8986166
https://doi.org/10.1109/nvmts47818.2019.8986166
Autor:
B. Patzold, R. Hoffmann, Lukas M. Eng, P. Steinke, T. Buttner, Thomas Kampfe, Malte Czernohorsky, Konrad Seidel, Matthias Rudolph, Kati Kühnel, Tarek Ali, P. Polakowski
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation. The key fundamental questions related to material development, device scalability effects, utiliz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77aa904c5534591b7fc826b426f62d5
https://doi.org/10.1109/imw.2019.8739651
https://doi.org/10.1109/imw.2019.8739651
Autor:
T. Buttner, R. Hoffmann, Lukas M. Eng, Johannes Müller, Kati Biedermann, P. Steinke, Kati Kühnel, Konrad Seidel, B. Patzold, Matthias Rudolph, Tarek Ali, K. Zimmermann, Thomas Kampfe, Malte Czernohorsky, P. Polakowski
We report for the first time the integration of silicon-doped hafnium oxide (HSO) antiferroelectric (AFE) material for enhanced floating-gate Flash memory speed by means of field-enhanced AFE polarization switching. An analytical description of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3367bc9c3fb180e71cd1c535b4fd8fd
https://publica.fraunhofer.de/handle/publica/259714
https://publica.fraunhofer.de/handle/publica/259714
Autor:
B. Patzold, M. Rudolph, S. Riedel, Kati Biedermann, Tarek Ali, D. A. Lohr, P. Polakowski, T. Buttner, R. Hoffmann, P. Steinke, Malte Czernohorsky, Kati Kühnel, Thomas Kampfe, J. Müller, Konrad Seidel, K. Zimmermann
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74cc283d79805275946a3a7147064c07
https://doi.org/10.7567/ssdm.2018.c-6-04
https://doi.org/10.7567/ssdm.2018.c-6-04
Autor:
R. Hoffmann, Malte Czernohorsky, P. Steinke, P. Polakowski, S. Riedel, Norbert Hanisch, D. A. Lohr, Johannes Müller, Konrad Seidel, Kati Kühnel, Jesús Calvo, Tarek Ali, Thomas Kampfe, T. Buttner, Matthias Rudolph, X. Thrun, B. Patzold
Publikováno v:
Applied Physics Letters. 112:222903
The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee5b3b9e5e2a61a7333ef9286e6dcd56
https://doi.org/10.1063/1.5029324
https://doi.org/10.1063/1.5029324