Zobrazeno 1 - 10
of 11
pro vyhledávání: '"B. P. Segner"'
Publikováno v:
Journal of The Electrochemical Society. 140:3284-3289
The reproducible fabrication of narrow (∼1.1 μm wide) mesas for InP-InGaAsP buried heterostructure lasers requires development of high quality stepper lithography and anisotropic dry etching of both the SiO 2 etch/regrowth mask and the underlying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d98efc2a4d1ea4b6a4e08ea8213f84
https://doi.org/10.1149/1.2221024
https://doi.org/10.1149/1.2221024
Autor:
U.K. Chakrabarti, Ralph A. Logan, John Lopata, J. L. Zilko, J.A. Long, B. P. Segner, D.L. Van Haren
Publikováno v:
Journal of Crystal Growth. 109:264-271
The effect of mesa shape on the planarity of InP regrowths produced by atmospheric pressure and low pressure (0.1 atm) selective (SiO 2 masked) metalorganic vapor phase epitaxy (MOVPE) is investigated. We find that for two separate atmospheric pressu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7c97da1118281f001962181cb97913
https://doi.org/10.1016/0022-0248(91)90188-b
https://doi.org/10.1016/0022-0248(91)90188-b
Publikováno v:
Journal of The Electrochemical Society. 137:2639-2642
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7fbb7997014513406d615c673cd8060
https://doi.org/10.1149/1.2087001
https://doi.org/10.1149/1.2087001
Autor:
B. P. Segner, S. G. Napholtz, Henryk Temkin, L. A. Koszi, E. J. Flynn, L. J. P. Ketelsen, G. J. Przybylek
Publikováno v:
Journal of Applied Physics. 64:3718-3721
An InP/InGaAsP laser‐monitor hybrid structure which demonstrates the use of channeled‐substrate buried‐heterostructure lasers or broad area double heterostructure devices as ‘‘on‐board’’ edge‐detecting back‐face monitors is presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d331ed24b481f584e0e04ebef8ce52
https://doi.org/10.1063/1.341415
https://doi.org/10.1063/1.341415
Autor:
S. N. G. Chu, S. Nakahara, A. K. Chin, E. J. Flynn, W. D. Johnston, B. P. Segner, Mark E. Twigg, L. A. Koszi
Publikováno v:
Journal of Applied Physics. 63:611-623
Channeled-substrate buried heterostructure (CSBH) lasers which were purged from populations undergoing high reliability qualification have been studied in detail. Gradual and rapid degradation mechanisms leading to accelerated aging failure modes hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476318c8d8f749943718ccd7b01b8cc6
https://doi.org/10.1063/1.340100
https://doi.org/10.1063/1.340100
Publikováno v:
Applied Physics Letters. 48:312-314
The fabrication and performance characteristics of InGaAsP (λ∼1.3 μm) ridge waveguide laser arrays are described. The ridges have variable spacing but are chosen to be of equal widths so that the propagation constants, which determine the emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57da3f0deb0672e6b40f51c7fd268719
https://doi.org/10.1063/1.96590
https://doi.org/10.1063/1.96590
Autor:
B. P. Segner, Henryk Temkin, Niloy K. Dutta, L. A. Koszi, C. M. Bogdanowicz, S. G. Napholtz, G. J. Pryzbylek
Publikováno v:
Applied Physics Letters. 51:2219-2221
We report the high‐power operation of λ=1.3 μm InGaAsP double‐channel planar buried‐heterostructure lasers with asymmetric mirror coatings. A stack of four dielectric layers is used to raise the reflectivity of one facet to over 80%, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b2f22efe870e6b2d946d18ea18edb2
https://doi.org/10.1063/1.98945
https://doi.org/10.1063/1.98945
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fe18a27fe126b5738c8cc7b16649c94
https://doi.org/10.1364/cleo.1985.tuf5
https://doi.org/10.1364/cleo.1985.tuf5
Publikováno v:
Applied Physics Letters. 46:803-804
InGaAsP quasi‐index‐guided multiridge waveguide laser arrays emitting at 1.3 μm have been fabricated. The lasers have threshold currents in the range 300–400 mA at 30 °C and have been operated to pulsed output powers as high as 500 mW. More t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cde9c941a6c62ec56454ab29a3d0a3
https://doi.org/10.1063/1.95888
https://doi.org/10.1063/1.95888
Publikováno v:
Electronics Letters. 21:1209
A 1.3 μm InP/InGaAsP channelled-substrate buried-heterostructure laser is monolithically integrated with a monitoring photodetector. The lasers have threshold currents in the range of 25–30 mA and the photodetector provides ∼ 15 μA of photocurr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8259058c976422008efc165478f61bd3
https://doi.org/10.1049/el:19850852
https://doi.org/10.1049/el:19850852