Zobrazeno 1 - 10
of 367
pro vyhledávání: '"B. P. Luther"'
Autor:
D. Alessi, Y. Wang, B. M. Luther, L. Yin, D. H. Martz, M. R. Woolston, Y. Liu, M. Berrill, J. J. Rocca
Publikováno v:
Physical Review X, Vol 1, Iss 2, p 021023 (2011)
We have demonstrated the efficient generation of sub-9-nm-wavelength picosecond laser pulses of microjoule energy at 1-Hz repetition rate with a tabletop laser. Gain-saturated lasing was obtained at λ=8.85 nm in nickel-like lanthanum ions excited by
Externí odkaz:
https://doaj.org/article/3f2140c7f7a340ff9a64c802e5f17133
Publikováno v:
Journal of Applied Physics. 89:7983-7987
Gold Schottky contacts to n-AlGaN were fabricated, and the influence of the semiconductor surface preparation on the electrical performance of the diodes was examined. More significantly, the electrical characteristics of the diodes were found to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3f06e6993bbafb01bc5aae4700ec13
https://doi.org/10.1063/1.1370367
https://doi.org/10.1063/1.1370367
Publikováno v:
Sensors and Actuators B: Chemical. 56:164-168
The characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time. This response from 200–400°C has been characterized by current–voltage measurements, revealing that the diodes are able to detect hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab5dbf96e2994a5443735ae35ecca3c
https://doi.org/10.1016/s0925-4005(99)00174-4
https://doi.org/10.1016/s0925-4005(99)00174-4
Publikováno v:
Semiconductor Science and Technology. 13:1322-1327
Ti (150 nm), TiN (200 nm) and Ti (5 nm)/TiN (200 nm) contacts have been fabricated on n-type GaN (Si doped , ) and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342b1d40b090704babbe6f8122e2a143
https://doi.org/10.1088/0268-1242/13/11/017
https://doi.org/10.1088/0268-1242/13/11/017
Publikováno v:
Journal of Electronic Materials. 27:196-199
The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time. The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115 nm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce573f1d6d13046054b94911fbc5fb8
https://doi.org/10.1007/s11664-998-0386-7
https://doi.org/10.1007/s11664-998-0386-7
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:607-610
Changes in film morphology upon annealing Ni and Ni/Au contacts to GaN were examined using scanning electron microscopy and atomic force microscopy. Atomic force microscopy was performed on the GaN surface that was exposed by etching away the metal f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d13d662d3430307b6019efa02e1061
https://doi.org/10.1116/1.581076
https://doi.org/10.1116/1.581076
Publikováno v:
Journal of Applied Physics. 82:650-654
Thin Ni films on GaN were annealed at temperatures between 400 and 900 °C in N2, Ar, and forming gas and were analyzed using glancing angle x-ray diffraction and Auger depth profiling. The first indication of an interfacial reaction was found after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcb364c97134c9a265d2f2e5321b75a
https://doi.org/10.1063/1.365593
https://doi.org/10.1063/1.365593
Publikováno v:
ChemInform. 29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c98f0c73d70a52f0828c006eeab297
https://doi.org/10.1002/chin.199814224
https://doi.org/10.1002/chin.199814224
Publikováno v:
Applied Physics Letters. 71:3859-3861
Using high resolution transmission electron microscopy, a thin pseudomorphic AlN layer (2–3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600 °C for 15 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863681b8674c55e47c44c9828b12778a
https://doi.org/10.1063/1.120526
https://doi.org/10.1063/1.120526
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
Publikováno v:
Applied Physics Letters. 70:2156-2158
The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 °C for up to 25 h. However, at 900 °C the growth of an oxide approximately 5000 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c6d4051bae13d3fea31abbb85c5c37
https://doi.org/10.1063/1.118944
https://doi.org/10.1063/1.118944