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pro vyhledávání: '"B. P. L. Reid"'
Autor:
J. T. Griffiths, T. Zhu, F. Oehler, R. M. Emery, W. Y. Fu, B. P. L. Reid, R. A. Taylor, M. J. Kappers, C. J. Humphreys, R. A. Oliver
Publikováno v:
APL Materials, Vol 2, Iss 12, Pp 126101-126101-5 (2014)
Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped st
Externí odkaz:
https://doaj.org/article/36f8b25e2cc5498790b171d574ea0cf9
