Zobrazeno 1 - 10
of 13
pro vyhledávání: '"B. O. Bordun"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 53-59 (2017)
Photoexcitation and photoluminescence spectra of β–Ga2O3 and (Y0.06Ga0.94)2O3 thin films obtained by high-frequency ion-plasmous sputtering was investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method.
Externí odkaz:
https://doaj.org/article/d7624c2f0d3448de9a37a281a87de37d
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 515-519 (2017)
The structure, phase composition and surface morphology of thin films β-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fus
Externí odkaz:
https://doaj.org/article/976f9c7b499c4871a68e0680b8842918
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 2, Pp 302-306 (2016)
Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increases from 4.60 to 4.65 eV after
Externí odkaz:
https://doaj.org/article/9841dd8c36be4062849a642b081b1b48
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 1, Pp 74-78 (2016)
Photoexcitation spectra and luminescence of thin films of ZnGa2O4 under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at
Externí odkaz:
https://doaj.org/article/0446d42450db4e88a43e3c3bf39f4543
Publikováno v:
Journal of Applied Spectroscopy. 88:257-260
The long-wavelength edge of the fundamental absorption band of β-Ga2O3 thin films obtained by radio-frequency ion-plasma sputtering is studied. The edge of interband absorption during annealing of the films in oxygen, argon, and hydrogen is shown to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e436cfdaf301d67a037d1f9047e2ec08
https://doi.org/10.1007/s10812-021-01166-8
https://doi.org/10.1007/s10812-021-01166-8
Publikováno v:
Journal of Applied Spectroscopy. 86:1010-1013
X-ray luminescence spectra of β-Ga2O3 thin films obtained by radio-frequency (RF) ion-plasma sputtering were studied at 80–300 K. The measured spectra were simulated in the framework of the linear electron–phonon coupling model. Luminescence cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a8008c41ce2522085f8175e4306bcb9
https://doi.org/10.1007/s10812-020-00932-4
https://doi.org/10.1007/s10812-020-00932-4
Publikováno v:
2021 IEEE 12th International Conference on Electronics and Information Technologies (ELIT).
The cathodoluminescence properties of thin oxide films $\beta-\mathbf{Ga}2\mathbf{O}_{3},\mathbf{ZnGa}_{2}\mathbf{O}_{4},\mathbf{ZnGn}_{2}\mathbf{O}_{4}:\mathbf{Mn},\mathbf{Zn}\mathbf{Ga}_{2}\mathbf{O}_{4}:\mathbf{Cr},\mathbf{Y}_{2}\mathbf{O}_{3}:\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b213ad6045619b8b6d93015146b6ab
https://doi.org/10.1109/elit53502.2021.9501095
https://doi.org/10.1109/elit53502.2021.9501095
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 53-59 (2017)
Photoexcitation and photoluminescence spectra of β–Ga2O3 and (Y0.06Ga0.94)2O3 thin films obtained by high-frequency ion-plasmous sputtering was investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d657c98827460fe30dffee8b533c6113
http://journals.pu.if.ua/index.php/pcss/article/view/1101
http://journals.pu.if.ua/index.php/pcss/article/view/1101
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 515-519 (2017)
The structure, phase composition and surface morphology of thin films β-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::522569a5356c22a8dd5fd4dfa4479858
http://journals.pu.if.ua/index.php/pcss/article/view/1234
http://journals.pu.if.ua/index.php/pcss/article/view/1234
Publikováno v:
Journal of Applied Spectroscopy. 84:46-51
Photoluminescence and photoexcitation spectra of β-Ga2O3 thin films prepared by high-frequency ion-plasma sputtering in an Ar atmosphere were investigated. Photoluminescence spectra were deconvoluted by the Alentsev—Fock method into ultimate const
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4c88df7ef9bcb4f5e78f0204acfb71
https://doi.org/10.1007/s10812-017-0425-3
https://doi.org/10.1007/s10812-017-0425-3