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Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena

Autor: B. Nafaa, O. Touayar, N. Ismail, Bogdan Cretu, Eddy Simoen, Anabela Veloso, Régis Carin

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2018, 150, pp.1-7. ⟨10.1016/j.sse.2018.08.010⟩

In this work, UTBOX SOI nMOSFETs have been studied at liquid helium temperature (i.e. 4.2 K). Transfer characteristics at very low temperature and polarization evidenced step-like effects that can be associated to energy subband scattering. Low frequ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31273d921d3f632fee2330a114e3249a
https://hal.archives-ouvertes.fr/hal-02438735

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Impact of channel orientation on low frequency noise performances of UTBOX nMOSFETs operated at liquid nitrogen temperature

Autor: O. Touayar, B. Cretu, Eddy Simoen, B. Nafaa, N. Ismail

Publikováno v: 2017 International Conference on Noise and Fluctuations (ICNF)
2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, France. ⟨10.1109/ICNF.2017.7985964⟩

Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard μ100ξ and rotated μ110ξ). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc609ab8d552cff309e329258cb6dad
https://hal.archives-ouvertes.fr/hal-01712399

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Impact of cryogenic temperature operation on static and low frequency noise behaviors of FD UTBOX nMOSFETs

Autor: O. Touayar, Eddy Simoen, N. Ismail, B. Nafaa, Bogdan Cretu

Publikováno v: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, France. ⟨10.1109/ULIS.2017.7962610⟩

Unusual peaks in the transconductance g m (V GS ) characteristics of n-channel UTBOX devices have been evidenced at 10 K and 77 K operation for an applied front gate voltage around 1.1 V while the back gate is grounded. The origin of this behavior wa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05765dee4e65dd11d98360e5a6f8bd3d
https://doi.org/10.1109/ulis.2017.7962610

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Static and low frequency noise characterization of n-channel 16 nm UTBOX devices

Autor: O. Touayar, B. Cretu, Eddy Simoen, N. Ismail, B. Nafaa

Publikováno v: 2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)
2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), Dec 2016, Hammamet, France. ⟨10.1109/SETIT.2016.7939833⟩

This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53611f5e35adff78e00888357cea6701
https://hal.archives-ouvertes.fr/hal-01712397

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