Zobrazeno 1 - 7
of 7
pro vyhledávání: '"B. N. LIMATA"'
Autor:
Z.S. FULOP, G.Y. GYURKY, E. SOMORJAIA, D. SCHURMANN, F. RAIOLA, F. STRIEDER, C. ROLFS, B. N. LIMATA, L. GIALANELLA, ROCA, VINCENZO, N. DECESARE, A. DONOFRIO, D. ROGALLA AND F. TERRASI, IMBRIANI, GIANLUCA, ROMANO, MARIO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2b726650f00166d177dcf2df5b82e787
http://hdl.handle.net/11591/165054
http://hdl.handle.net/11591/165054
Publikováno v:
Physics Education; Nov2017, Vol. 52 Issue 6, p1-1, 1p
Autor:
Lucio Gialanella, F. Raiola, Gianluca Imbriani, Filippo Terrasi, Frank Strieder, B. Limata, Zs. Fülöp, Detlef Rogalla, E. Somorjai, Mario R. Romano, Antonio Esposito, Antonio D'Onofrio, Vincenzo Roca, D. Schürmann, N. De Cesare, C. Rolfs, Gy. Gyürky
Publikováno v:
The European Physical Journal A. 27:193-196
(7)Be decays via electron capture and therefore its half-life is expected to depend on the electron density at the nucleus. We measured the (7)Be half-life in palladium, tungsten, zirconium and tantalum metals, in order to investigate the influence o
Autor:
Rossano Carta, L. Gialanella, Santolo Daliento, B.N. Limata, Luigi Mele, Paolo Spirito, L. Bellemo, M. Romano
In this paper, a study of the effects on both lifetime and resistivity, induced by helium implantation processes, is presented. A wide range of implantation energies (from 3.5 MeV to 5.8 MeV) and doses (from 1middot108 atm/cm2 to 2middot1011 atm/cm2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6869d7632fd7af61af393debd453218
http://hdl.handle.net/11588/311470
http://hdl.handle.net/11588/311470
Autor:
Lucio Gialanella, Gianluca Imbriani, Frank Strieder, Zs. Fülöp, Mario R. Romano, C. Rolfs, D. Schürmann, Gy. Gyürky, Filippo Terrasi, B. Limata, Antonio D'Onofrio, F. Raiola, E. Somorjai, Detlef Rogalla, N. De Cesare, Vincenzo Roca
The electron capture half life of 7 Be implanted into different metals has been measured with high precision in order to search for a possible dependence of the decay rate on the electron configuration around the 7 Be atoms. In order to reduce system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61fed51b500d7a1f5ef00dbadc30a1e5
http://hdl.handle.net/11588/512941
http://hdl.handle.net/11588/512941
Autor:
Annunziata Sanseverino, Rossano Carta, Paolo Spirito, M. Romano, Lucio Gialanella, B. Limata, Santolo Daliento, L. Bellemo
The distribution of recombination centers induced in Si epi-substrates by helium (He) implantation is obtained for the first time by direct measurement of local recombination lifetime profile along the layer, using the ac differential lifetime profil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6460f3b2cd58d172642e8fdbd1f2a645
http://hdl.handle.net/11588/103060
http://hdl.handle.net/11588/103060