Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Autor: Durga Gajula, Paul Baine, B. Mervyn Armstrong, Peter Fleming, Ray Duffy, David McNeill

Publikováno v: ECS Transactions. 35:521-527

Nickel germanide Schottky contacts, formed by rapid thermal annealing of thin nickel films, have been characterized on n-type germanium wafers for a range of RTA temperatures. The highest Schottky barrier heights for electrons (= 0.6-0.7 eV) were obt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cdbfde1b1994d29987f49a7472411455
https://doi.org/10.1149/1.3569943

Improved Thermal Performance of SOI Using Compound Buried Layer

Autor: Suli Suder, Robin Wilson, Sarah J. Harrington, Harold Gamble, J.H. Montgomery, Paul Baine, Sydney Nigrin, Kean B. Oo, B. Mervyn Armstrong, Alastair Armstrong

Publikováno v: Baine, P, Montgomery, J, Armstrong, M, Gamble, H, Harrington, S J, Nigrin, S, Wilson, R, Oo, K B, Armstrong, A & Suder, S 2014, ' Improved Thermal Performance of SOI Using Compound Buried Layer ', pp. 1999-2006 . https://doi.org/10.1109/TED.2014.2318832

The buried oxide (BOX) layer in silicon on insulator (SOI) was replaced by a compound buried layer (CBL) containing layers of ${\rm SiO}_{2}$ , polycrystalline silicon (polysilicon), and ${\rm SiO}_{2}$ . The undoped polysilicon in the CBL acted as a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ed006cddd886903b0094f6481ff25a5
https://pure.qub.ac.uk/en/publications/improved-thermal-performance-of-soi-using-compound-buried-layer(a8fe33d5-dd05-4633-87a2-ed75d6cdd02a).html

Growth of Multi-Layer Si/Si1-xGex Structures Using Rapid Thermal Chemical Vapour Deposition

Autor: B. Mervyn Armstrong, Harold Gamble, David McNeill

Publikováno v: MRS Proceedings. 326

Silicon and Si1-xGex layers have been epitaxially grown on silicon substrates in a radiantly heated rapid thermal LPCVD reactor using SiH4/GeH4/H2 gas chemistry with the addition of B2H6 and PH3 for in-situ doping. Oxygen-free Si1-xGex layers (0.05 <

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e09ecc8366e224ca5542498c86671591
https://doi.org/10.1557/proc-326-187

Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

Autor: Fred Ruddell, Harold Gamble, C. Parkes, B. Mervyn Armstrong

Publikováno v: MRS Proceedings. 146

This paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31427adbea5ccf948be66fae79d4544c
https://doi.org/10.1557/proc-146-133

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