Zobrazeno 1 - 10
of 120
pro vyhledávání: '"B. Mazhari"'
Publikováno v:
Iran Journal of Nursing. 34:31-43
Akademický článek
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Publikováno v:
2021 IEEE 18th India Council International Conference (INDICON).
Publikováno v:
2021 International Semiconductor Conference (CAS).
Accurate electrical characterization of thin film transistor (TFT), requires measurement of its contact resistance. This work describes experimental extraction of contact resistance in top contact a-IGZO TFTs using a four-terminal structure. The auxi
Autor:
S. M. H. Rizvi, B. Mazhari
Publikováno v:
2018 4th IEEE International Conference on Emerging Electronics (ICEE).
This paper presents a simple methodology to incorporate the effects of diffusion into conventional space-charge-limited current (SCLC) of a zero built-in potential device. The resultant model is simple and a comparison between theoretical and experim
Akademický článek
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Autor:
B. Mazhari
Publikováno v:
Solar Energy Materials and Solar Cells. 90:1021-1033
The validity of conventional circuit model for interpreting results obtained using organic solar cells is examined. It is shown that the central assumption in the model that photo-generated current remains constant from short-circuit to open-circuit
Autor:
S. M. H. Rizvi, B. Mazhari
Publikováno v:
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I — V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecti
Autor:
B. Mazhari
Publikováno v:
Organic Electronics. 6:229-236
An analysis of recombination in bilayer organic light-emitting diodes is presented using numerical simulations and analytical model. It is shown using simulations that although recombination occurs close to the organic–organic interface, the recomb
Autor:
B. Mazhari
Publikováno v:
Solid-State Electronics. 49:311-315
Efficiency of carrier recombination in bilayer organic light emitting diodes is described using numerical simulations and analytical model. It is shown that the most important factor that determines efficiency is the ratio of hole and electron mobili