Zobrazeno 1 - 5
of 5
pro vyhledávání: '"B. Martinez Diaz"'
Autor:
L.C. Contamin, B. Cardoso Paz, B. Martinez Diaz, B. Bertrand, H. Niebojewski, V. Labracherie, A. Sadik, E. Catapano, M. Casse, E. Nowak, Y.-M. Niquet, F. Gaillard, T. Meunier, P.-A. Mortemousque, M. Vinet
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5555a03bdbc307c64c073fddefe88795
https://doi.org/10.1109/iedm45625.2022.10019396
https://doi.org/10.1109/iedm45625.2022.10019396
Autor:
Adrien Morel, Louis Hutin, B. Brun-Barriere, D. J. Niegemann, Romain Maurand, V. El Homsy, Yann-Michel Niquet, Yvain Thonnart, Maud Vinet, T. Bedecarrats, B. Paz, B. Jadot, Simon Zihlmann, B. Martinez Diaz, N. Rambal, M. Nurizzo, Marc Sanquer, A. Amisse, Benoit Bertrand, Matias Urdampilleta, R. Ezzouch, Gerard Billiot, E. Vincent, Heimanu Niebojewski, Xavier Jehl, Tristan Meunier, Pierre-André Mortemousque, C. Spence, Jing Li, A. Apra, Etienne Dumur, V. Thiney, E. Catapano, H. Jacquinot, Cécile Xinqing Yu, B. Klemt, L. Pallegoix, V. Schmitt, Candice Thomas, M. Casse, N. Piot, E. Chanrion, Benjamin Venitucci, G. Troncoso Fernandez-Bada, Vincent P. Michal, S. De Franceschi, Jean Charbonnier
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM)
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
International audience; We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80b49a63e79240fbf43cdd0b83c45ec5
https://doi.org/10.1109/iedm13553.2020.9371962
https://doi.org/10.1109/iedm13553.2020.9371962
Akademický článek
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Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
T. Bedecarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J.-M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Casse, M. Urdampilleta, Y.-M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM)
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange intera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1c892fbeb5143c5523e1806591ef4aa
