Zobrazeno 1 - 10
of 16
pro vyhledávání: '"B. Marheineke"'
Autor:
B. Marheineke, M Aigle, J Porsche, J.M. Schneider, Rolf Sauer, Wolfgang Limmer, J. Gerster, H. Heinecke
Publikováno v:
Journal of Crystal Growth. 188:225-230
Micro-Raman spectroscopy has been utilized to determine the local material composition of an In x Ga 1-x As layer and the local free-charge-carrier concentration of a Si-doped InP layer grown on patterned InP(100) substrates. The layers exhibited 8 o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f50165b549c11a453d693c0d0736da
https://doi.org/10.1016/s0022-0248(98)00079-7
https://doi.org/10.1016/s0022-0248(98)00079-7
Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces
Publikováno v:
Journal of Crystal Growth. 188:183-190
The doping of InP using Si and Zn has been studied for MOMBE growth on (1 0 0), (1 1 1)A, (1 1 1)B and for the overgrowth of nonplanar surfaces. The investigation of large area growth shows that Si acts as a donor on the three investigated surfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e86373ca25a5d4166030095124b6c5c
https://doi.org/10.1016/s0022-0248(98)00095-5
https://doi.org/10.1016/s0022-0248(98)00095-5
Publikováno v:
Journal of Crystal Growth. 170:161-166
In a comparative study we have chosen TBAs and TBP as well as AsH 3 and PH 3 for the growth of InP/GaInAs(P) heterostructures for laser applications in a production metalorganic molecular beam epitaxy (MOMBE) system. The n-type doping was performed w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04378161cbd640f319cb4f12cec13ee9
https://doi.org/10.1016/s0022-0248(96)00627-6
https://doi.org/10.1016/s0022-0248(96)00627-6
Publikováno v:
Journal of Crystal Growth. 164:16-21
We have studied the uniform growth of GaInAs(P) on InP using 5 inch substrate holders, designed for 2 inch single wafers to 3 × 2 inch multiwafer growth. The design of the holder, and thus the temperature gradient across the growth area shows a sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc8cdd5a7a57bb60ddad6f9aa8ffae9
https://doi.org/10.1016/0022-0248(96)00013-9
https://doi.org/10.1016/0022-0248(96)00013-9
Publikováno v:
Journal of Crystal Growth. 150:528-532
This report focuses on the effect of the As species and the V/III ratio on the optical properties of Ga 1-x In x As/InP grown by molecular beam epitaxy (MBE). The band gap energies of the layers were measured by low temperature photoluminescence (PL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b08c4534c9829fcb21ddd7807873d0
https://doi.org/10.1016/0022-0248(95)80267-g
https://doi.org/10.1016/0022-0248(95)80267-g
Autor:
A. Janssen, N. Meyer, B. Marheineke, S. Hartmann, H. Blei, M. Heuken, Wolfgang Kowalsky, Holger Schwab, Hans-Hermann Johannes, Dietrich Bertram, Reinhard Caspary
Publikováno v:
SID Symposium Digest of Technical Papers. 37:1563
We present data on the deposition of various organic materials using Organic Vapor Phase Deposition (OVPD®) for use in efficient red OLEDs. The long term stability of the OVPD process has been investigated, showing reproducibility of deposition rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a43983985e3745fe1a67b1af0db4886c
https://doi.org/10.1889/1.2433295
https://doi.org/10.1889/1.2433295
Autor:
G. Strauch, B. Marheineke, M. Gersdorff, M. Reinhold, Wolfgang Kowalsky, M. Heuken, Cameliu Himcinschi, Hans-Hermann Johannes, Dietrich R. T. Zahn, N. Meyer, A. Janssen, M. Schwambera, S. Hartmann
Publikováno v:
SID Symposium Digest of Technical Papers. 35:1388
We are discussing the latest results in the field of Organic Vapor Phase Deposition (OVPD) on basis of our experimental data. In particular the use of carrier gas and its controlled mass flow are adding an additional parameter to control deposition r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ead382817cd2dc6c5e801a26ce469a
https://doi.org/10.1889/1.1821353
https://doi.org/10.1889/1.1821353
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