Zobrazeno 1 - 10
of 43
pro vyhledávání: '"B. Maleyre"'
Publikováno v:
physica status solidi (c). 2:1379-1383
We report a detailed study of the optical properties unintentionally doped and n-doped InN films grown by Metal Organic Vapour Phase Epitaxy. When increasing the doping, a blue-shift of the absorption and reflectance spectra is found that we quantita
Publikováno v:
physica status solidi (c). 2:826-832
We report on comparative studies of basic properties of indium nitride quantum dots (QDs) grown by metal organic vapour phase epitaxy (MOVPE) on GaN, AlN and Si(111). Variation of the growth parameters, such as the growth temperature, deposition time
Publikováno v:
SUPERLATTICES AND MICROSTRUCTURES
Meeting of the European-Materials-Research-Society
Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526
Meeting of the European-Materials-Research-Society
Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526
This study presents the MOVPE growth of InN films onto different substrate materials, including sapphire, nitrided or not, GaN and AlN buffer layers deposited onto sapphire, and Si(111).;For InN growth onto nitrided sapphire, different growth paramet
Autor:
J. Frandon, Bernard Gil, Olivier Briot, Sandra Ruffenach, F. Demangeot, C. Pinquier, B. Maleyre
Publikováno v:
JOURNAL OF CRYSTAL GROWTH
1st International Workshop on Indium Nitride
1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28
1st International Workshop on Indium Nitride
1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28
International audience; We demonstrate that the phonon frequencies that are reported in the literature for indium nitride (InN), films are all consistently correlated to the strain state of the material. Raman spectroscopy measurements and X-ray inve
Publikováno v:
Journal of Crystal Growth. 269:15-21
We present results for the MOVPE growth of InN films onto sapphire substrates, by direct growth or using a GaN buffer layer. As opposed to common belief, it is shown that a low V/III molar ratio has to be used in order to achieve high quality films.
Autor:
Olivier Briot, C. Pinquier, Bernard Gil, Sandra Clur-Ruffenach, J. Frandon, F. Demangeot, B. Maleyre
Publikováno v:
physica status solidi (c). 1:1425-1428
We report the observation of a broad absorption in the 1.25 eV region that is typical of thin InN films. Such a feature we attribute to light absorption at the energy of the fundamental direct band gap of InN, while we attribute the low energy 650–
Autor:
F. Demangeot, Bernard Gil, C. Pinquier, J. Frandon, Sandra Ruffenach, Olivier Briot, B. Maleyre
Publikováno v:
physica status solidi (c). 1:1420-1424
Using measurements of phonons frequencies in large size InN quantum dots deposited by Metal-organic vapor phase epitaxy, we found these frequencies to experience a blue shift with increasing compression. Next we show that all the phonon frequencies r
Publikováno v:
physica status solidi (a). 202:590-592
We report on the optical characterization of InN layers in the THz range and magnetic fields up to 13 T. The results are interpreted using the dielectric function formalism, with contributions of cyclotron resonance, phonons, plasmons and helicon wav
Publikováno v:
Applied Physics Letters. 83:2919-2921
With respect to growing indium nitride quantum dots with very low surface densities for quantum cryptography applications, we have studied the metalorganic vapor phase epitaxy of InN onto GaN buffer layers. From lattice mismatch results the formation
Autor:
Olivier Briot, C. Pinquier, P. Munsch, Sandra Ruffenach, J. Frandon, B. Maleyre, B. Couzinet, Bernard Gil, Alain Polian, Jean-Claude Chervin, F. Demangeot
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩
Indium nitride under high pressure (up to $50\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$) was analyzed by means of Raman spectroscopy. The wurtzite to rocksalt phase transition was evidenced at the pressure of $13.5\ifmmode\pm\else\textpm\fi{}0.5\phanto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::842045c1b4082d1375c13cbe45b4dffe
https://hal.archives-ouvertes.fr/hal-00022132
https://hal.archives-ouvertes.fr/hal-00022132