Zobrazeno 1 - 10
of 11
pro vyhledávání: '"B. M. Way"'
Publikováno v:
Physical Review B. 54:144-151
Raman scattering studies of ${\mathrm{B}}_{\mathit{x}}$${\mathrm{C}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ films have been carried out for boron concentrations in the range 0\ensuremath{\le}x\ensuremath{\le}0.17. The spectra exhibit two broad bands,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfaa48be4180d56fc810b59536b23f83
https://doi.org/10.1103/physrevb.54.144
https://doi.org/10.1103/physrevb.54.144
Publikováno v:
Journal of Applied Physics. 77:2363-2369
Using chemical‐vapor deposition nanodispersed silicon has been prepared in carbon at temperatures between 850 and 1050 °C. Samples with up to 11% atomic silicon in carbon show the same pregraphitic x‐ray‐diffraction pattern as those without si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35b94ee2e7ea60baf30b397a2f9a3aa9
https://doi.org/10.1063/1.358759
https://doi.org/10.1063/1.358759
Publikováno v:
Journal of The Electrochemical Society. 141:900-907
Nitrogen-containing carbons N[sub z]C[sup 1[minus]z] have been made from different precursors at temperature between 850 and 1,050 C. Their composition and structure have been studies by chemical analysis, powder X-ray diffraction, X-ray absorption s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70674bc67cbf5911bfec4e76dd720a63
https://doi.org/10.1149/1.2054855
https://doi.org/10.1149/1.2054855
The Effect of Boron Substitution in Carbon on the Intercalation of Lithium in Li x ( B z C 1 − z ) 6
Autor:
J. R. Dahn, B. M. Way
Publikováno v:
Journal of The Electrochemical Society. 141:907-912
Boron-substituted carbons, B[sub z]C[sub 1[minus]z], have been produced by chemical vapor deposition from benzene and boron trichloride precursors at 900 C. The voltage and reversible capacity of Li/Li[sub x](B[sub z]C[sub 1[minus]z])[sub 6] cells we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ba6d6e4dcfc587bf916b75d0d72bff
https://doi.org/10.1149/1.2054856
https://doi.org/10.1149/1.2054856
Autor:
Thomas Tiedje, W. J. Weydanz, Eric Wayne Fuller, T. van Buuren, J. R. Dahn, John S. Tse, B. M. Way, D. D. Klug
Publikováno v:
Journal of Applied Physics. 75:1946-1951
Several porous silicon, siloxene (Si6H6O3), heat‐treated siloxene, and layered polysilane (Si6H6) samples have been studied with K‐ and L‐edge x‐ray photoabsorption, photoemission, and powder x‐ray diffraction. The x‐ray absorption of lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb869160e84c1ab5408ae99eeb08ea9d
https://doi.org/10.1063/1.356342
https://doi.org/10.1063/1.356342
Publikováno v:
Physical Review B. 48:17872-17877
Powder-x-ray-diffraction measurements on siloxene and calculations of the diffraction patterns for the three commonly proposed structures of siloxene (${\mathrm{Si}}_{6}$${\mathrm{H}}_{6}$${\mathrm{O}}_{3}$) clearly show that only a structure with si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d783f4bf9df7b923e654249ec2bdbad5
https://doi.org/10.1103/physrevb.48.17872
https://doi.org/10.1103/physrevb.48.17872
Autor:
B. M. Way, J. R. Dahn
Publikováno v:
ChemInform. 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967f44a6d3bb6228933806b6152ff1bb
https://doi.org/10.1002/chin.199431008
https://doi.org/10.1002/chin.199431008
Publikováno v:
ChemInform. 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7518d31662f9ce76b77113e32911fc57
https://doi.org/10.1002/chin.199431007
https://doi.org/10.1002/chin.199431007
Publikováno v:
Physical Review B. 46:1697-1702
Using chemical vapor deposition (CVD), we have prepared ${\mathrm{B}}_{\mathit{x}}$${\mathrm{C}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ solid solutions for 0x0.17, which have the graphite structure. By varying the relative proportions of benzene and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7129b18676f7d98fd153ee6ba93a744a
https://doi.org/10.1103/physrevb.46.1697
https://doi.org/10.1103/physrevb.46.1697
Publikováno v:
Applied Physics Letters. 63:2911-2913
Photoemission and x‐ray absorption spectroscopy show that both the conduction and valence bands of porous silicon are shifted relative to the bands for bulk silicon, as expected in the quantum confinement model for the optical properties of porous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9365d9059fbc7d77a749e9b7ecb7f5
https://doi.org/10.1063/1.110270
https://doi.org/10.1063/1.110270