Zobrazeno 1 - 10
of 10
pro vyhledávání: '"B. M. Seredin"'
Publikováno v:
Technical Physics. 66:453-460
Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed and implemented for the formation of local zones consisting in the filling of linear grooves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87479061a113457f338fb2859d003bb9
https://doi.org/10.1134/s1063784221030178
https://doi.org/10.1134/s1063784221030178
Autor:
I. L. Shul’pina, S. G. Simakin, A. N. Zaichenko, S. Yu. Martyushov, B. M. Seredin, Andrey A. Lomov
Publikováno v:
Technical Physics Letters. 46:279-282
A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd98e676611b2904b848cae78e10d9b
https://doi.org/10.1134/s1063785020030268
https://doi.org/10.1134/s1063785020030268
Publikováno v:
Crystallography Reports. 63:1178-1182
The effect of the Al–Ga melt composition on the mass transfer processes occurring during silicon recrystallization has been investigated by the thermomigration method. The threshold temperatures of thermomigration onset are determined. The kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942f6e36fe41d21517a633077ae3745c
https://doi.org/10.1134/s1063774518070143
https://doi.org/10.1134/s1063774518070143
Publikováno v:
Semiconductors. 51:798-802
Analytical expressions describing the dependences of the p +–n-junction leakage current on the doping level of the p +-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4561ce269d62e0c4827591d3c266bd
https://doi.org/10.1134/s1063782617060227
https://doi.org/10.1134/s1063782617060227
Publikováno v:
Semiconductors. 51:285-289
The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume of the silicon substrate, are reported (similar regions doped with an acceptor impurity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2552ecb26d51a46c2bcda165c1e819e0
https://doi.org/10.1134/s1063782617030162
https://doi.org/10.1134/s1063782617030162
Publikováno v:
Technical Physics Letters. 42:1045-1048
A technique for detection of the theoretically predicted effect of transfer of a local disturbance from one phase boundary of a flat liquid zone to another during its thermomigration in a crystal is presented. The results of experimental studies of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede3bcdc389a5917f54cee9d5908fb6e
https://doi.org/10.1134/s1063785016100230
https://doi.org/10.1134/s1063785016100230
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:1293-1301
The influence of the main process-dependent parameters characterizing the abrasive blasting of singlecrystal silicon substrates on the treatment efficiency, surface quality, and microrelief properties is investigated experimentally. The optimal treat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09cb276b836cc2d24f02fb08f2867c78
https://doi.org/10.1134/s1027451015060348
https://doi.org/10.1134/s1027451015060348
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 18:179-188
Characteristics of crystal doping with electrically active impurities by the thermomigration method for two− and three−component liquid zones in comparison with diffusion alloying (for the example of silicon) have been analyzed. We have found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137845a325bf68d0533153db8bc05d5d
https://doi.org/10.17073/1609-3577-2015-3-179-188
https://doi.org/10.17073/1609-3577-2015-3-179-188
Publikováno v:
Inorganic Materials. 50:215-221
Experimental data are presented that demonstrate the possibility of producing GaInAsP quantum dots on GaAs by ion beam deposition. The morphology of the quantum dots and the effect of GaAs substrate temperature on parameters of GaInAsP quantum dot ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e347d978a4a4b67aeabba5b7c5a51399
https://doi.org/10.1134/s0020168514020174
https://doi.org/10.1134/s0020168514020174
Publikováno v:
Journal of Physics: Conference Series. 1400:044012
We present the results of optimization of the temperature gradient zone melting technique, also known as the thermomigration (ThM) technique, aimed on improvement of the quality of p-layers and formation of p-n junctions with sharper boundaries compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e01e48b3b71c46df6c7dd079eabda5a
https://doi.org/10.1088/1742-6596/1400/4/044012
https://doi.org/10.1088/1742-6596/1400/4/044012