Zobrazeno 1 - 10
of 32
pro vyhledávání: '"B. M. Ayupov"'
Publikováno v:
Applied Surface Science. 265:385-388
Silicon carbonitride films were obtained by PECVD method from hexamethyldisilazane at different deposition temperatures. Mechanical stresses in the films were studied by laser beam deflection method. It was found that the films deposited at low tempe
Autor:
V. G. Kesler, A. N. Golubenko, Fedor A. Kuznetsov, B. M. Ayupov, N. I. Fainer, E. A. Maximovskii, Yu. M. Rumyantsev
Publikováno v:
Glass Physics and Chemistry. 39:77-88
Films of silicon carbonitride have been obtained by the plasma chemical decomposition of a gaseous mixture of helium and a volatile organic silicon compound 1,1,3,3-tetramethyldisilazane (TMDS) in the temperature range of 373–973 K. The modeling of
Publikováno v:
Russian Journal of Physical Chemistry A. 86:1716-1720
Films of SiC x N y H z composition are obtained by chemical deposition from the vapor phase via the activation of high-frequency discharge plasma (PECVD). The organosilicon compound hexamethyldisilazane, which contains all the atoms needed for the fo
Publikováno v:
Optics and Spectroscopy. 112:201-205
The optical characteristics of nickel films deposited on Si(100) substrates by vacuum thermal evaporation have been studied. The thickness and optical constants of the films are determined using monochromatic zero ellipsometry, while the inverse prob
Autor:
B. M. Ayupov, Yu. M. Rumyantsev, N. I. Fainer, M. G. Voronkov, V. I. Rakhlin, V. G. Kesler, A. N. Golubenko
Publikováno v:
Glass Physics and Chemistry. 38:15-26
Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile siliconorganic compound tris(diethylamino)silane (Et 2N)3Si
Publikováno v:
Russian Journal of Inorganic Chemistry. 56:1216-1221
The subsolidus regions of the Li2MoO4-A 2 + MoO4-NiMoO4 (A+ = K, Rb, Cs) systems at 510°C have been triangulated by the intersecting-joins method. The A2MoO4-Li2Ni2(MoO4)3, Li2MoO4-A2Ni2(MoO4)3, A2Ni2(MoO4)3-Li2Ni2(MoO4)3 (A = K, Rb, Cs), and ALiMoO
Publikováno v:
Glass Physics and Chemistry. 37:316-321
Synthetic process for nanocrystalline silicon carbonitride films was developed using plasma-chemical decomposition of a new organosilicon reagent, namely, trimethyl(phenylamino)silane Me3SiNHPh. Synthesis was carried out from the gaseous mixtures, su
Autor:
E. A. Maksimovskii, V. R. Shayapov, Yu. M. Rumyantsev, B. M. Ayupov, Marina Kosinova, A. P. Smirnov
Publikováno v:
Inorganic Materials. 47:262-266
Boron carbonitride (BC x N y ) films of different compositions have been grown by low-pressure chemical vapor deposition using triethylamine borane as a single-source precursor and ammonia as an additional nitrogen source. Experiments were performed
Publikováno v:
Journal of Structural Chemistry. 51:179-185
Specific features of elemental composition analysis of silicon carbonitride thin films by energy dispersive spectroscopy (EDS) are considered. The films were preliminarily examined by IR spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:452-457
The approach to determination of the thickness and the refractive indices of dielectric films obtained in searching experiments is discussed. Experiments of this kind often exhibit unpredictable values of thickness and refractive indices of films. No