Zobrazeno 1 - 10
of 11
pro vyhledávání: '"B. M. Armstrong"'
Publikováno v:
Journal of The Electrochemical Society. 145:1738-1743
Silicon-on-insulator (SOI) structures comprised of fully dielectrically isolated device wells have been fabricated, utilizing a trench-before-bond process to create polish stops. The SOI layers have thicknesses between 1.5 and 3.0 μm with uniformiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691bd23ec137cf4d560be033a6c299ff
https://doi.org/10.1149/1.1838550
https://doi.org/10.1149/1.1838550
Autor:
David McNeill, B. E. Coss, Durga Gajula, Srikar Jandhyala, Robert M. Wallace, B. M. Armstrong, Jin-Hyun Kim, Hong Dong
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Germanium is of unique interest for CMOS technology because of its high electron and hole mobilities compared with those of its counterpart silicon [1]. Significant progress has been in germanium p-MOSFETs, while in n-MOSFETS there are some hindrance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f2c676958dc9d2fde47a7c58d38490
https://doi.org/10.1109/isdrs.2011.6135277
https://doi.org/10.1109/isdrs.2011.6135277
Autor:
H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell, D. W. McNeill
Publikováno v:
Semiconductor-On-Insulator Materials for Nanoelectronics Applications ISBN: 9783642158674
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78fee2e6be0d648c390b5cfa9b54ad40
https://doi.org/10.1007/978-3-642-15868-1_1
https://doi.org/10.1007/978-3-642-15868-1_1
Publikováno v:
Semiconductor Science and Technology. 5:765-770
A plasma-stimulated LPCVD rapid thermal processor has been developed. This processor is capable of operation in the limited reaction processing (LRP) regime and offers sequential in situ processes such as silicon deposition, plasma oxidation and inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d88fb05b6671d8bacb6a12c48465da
https://doi.org/10.1088/0268-1242/5/7/022
https://doi.org/10.1088/0268-1242/5/7/022
Autor:
N. D. McCusker, B. M. Armstrong
Publikováno v:
MRS Proceedings. 563
RF-magnetron sputter deposited copper/zirconium alloy films have been characterised in terms of resistivity, composition, microstructure, texture and stress. The properties and electromigration reliability of these alloys have been compared to those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e57bc8528045cb1a7687ecb2d11816b
https://doi.org/10.1557/proc-563-115
https://doi.org/10.1557/proc-563-115
Autor:
Srikar Jandhyala, Jiyoung Kim, B. M. Armstrong, Robert M. Wallace, Hong Dong, Durga Gajula, B. E. Coss, David McNeill
Publikováno v:
Applied Physics Letters. 100:192101
In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300 °C, all phases of nickel and germanium convert to ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126d618c032a7193a779c225099d69bf
https://doi.org/10.1063/1.4712564
https://doi.org/10.1063/1.4712564
Autor:
Su Li Suder, Harold S Gamble, B. M. Armstrong, S Bhattacharyya, R Hurley, Paul T. Baine, D. W. McNeill
Publikováno v:
ECS Meeting Abstracts. :1406-1406
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3c21b18c76e186c2bbd4d7df24a63e
https://doi.org/10.1149/ma2006-02/31/1406
https://doi.org/10.1149/ma2006-02/31/1406
Publikováno v:
Journal of Materials Science: Materials in Electronics; May2003, Vol. 14 Issue 5-7, p329-332, 4p
Publikováno v:
Journal of The Electrochemical Society. 124:1462-1463
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f090ce01fdb2e3ebf6bc8a69d89dca73
https://doi.org/10.1149/1.2133678
https://doi.org/10.1149/1.2133678