Zobrazeno 1 - 10
of 21
pro vyhledávání: '"B. M. Kostishko"'
Autor:
V. G. Burmistrova, Yu Z. Pchelkina, A. A. Butov, M. G. Moskvicheva, M. A. Volkov, M. S. Yavtushenko, B. M. Kostishko
Publikováno v:
Journal of Physics: Conference Series. 1745:012069
This paper considers the possibility of predicting the most frequent aviation event “Collision of an aircraft with a bird”, depending on the seasonality near the airfield. A model for determining the probability of this event is proposed, where t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c746e073b206000c39307645845b18
https://doi.org/10.1088/1742-6596/1745/1/012069
https://doi.org/10.1088/1742-6596/1745/1/012069
Publikováno v:
Semiconductors. 43:355-358
The results of simulation of processes of thermal annealing of porous silicon under the effect of high-temperature heating both in a homogeneous temperature field and under conditions of the presence of a linear temperature gradient in the system are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642f24b46c239443139c47c66f1ed12a
https://doi.org/10.1134/s1063782609030178
https://doi.org/10.1134/s1063782609030178
Autor:
S. N. Mikov, B. M. Kostishko, Yu. S. Nagornov, E. S. Pchelintseva, Sh. R. Atazhanov, A. V. Zolotov
Publikováno v:
Technical Physics. 52:1093-1097
Based on X-ray diffraction analysis, Auger spectroscopy, and Raman scattering, it is shown that carbonization of porous silicon at temperatures of 1200–1300°C results in formation of silicon carbide nanocrystals 5–7 nm in size. The growth of 3C-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f89f8141df7cf95ec087b27a5452eaf
https://doi.org/10.1134/s1063784207080221
https://doi.org/10.1134/s1063784207080221
Publikováno v:
Measurement Techniques. 47:1032-1038
A new procedure is described for preparing standard spectra of the inverse self-convolution of the density of states for silicon oxide required for performing non-destructive quantitative Auger analysis of SiOx. Research results are used for determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06af162e6b801459b479353c01da315f
https://doi.org/10.1007/s11018-005-0053-9
https://doi.org/10.1007/s11018-005-0053-9
Publikováno v:
Vacuum. 73:105-108
The results of the research into the influence of argon ion irradiation at 3 keV on the composition and structure of porous silicon are presented. At a certain angle of incidence of the particles relative to the surface of the monocrystallites, an un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7719bc1fc8e2c4afc490a6b8486c4e72
https://doi.org/10.1016/j.vacuum.2003.12.030
https://doi.org/10.1016/j.vacuum.2003.12.030
Autor:
B. M. Kostishko, Yu. S. Nagornov
Publikováno v:
Technical Physics. 46:847-852
Water after-etching of porous silicon in an external electric field is studied. The application of the electric field, irrespective of its strength and orientation, is shown to decrease the etch rate. When the field vector is directed from the porous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2621db0474c0009bf64cdd6f611f45f1
https://doi.org/10.1134/1.1387545
https://doi.org/10.1134/1.1387545
Publikováno v:
Technical Physics Letters. 26:919-922
We have studied changes in the surface composition and photoluminescence spectrum of porous silicon (por-Si) during the ion-plasma etching of samples in an argon-oxygen gas mixture. This treatment leads to the passivation of the surface of quantum fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef0118bc03d3e2634a5d614cd494946e
https://doi.org/10.1134/1.1321239
https://doi.org/10.1134/1.1321239
Autor:
A. M. Orlov, B. M. Kostishko
Publikováno v:
Technical Physics. 43:318-322
The influence of electron irradiation on the light-emitting properties of p-and n-type porous silicon prepared by electrochemical etching is investigated. The dose and energy dependences of the electron-stimulated quenching of the photoluminescence (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0e17e4088672843a67224d8bd124f80
https://doi.org/10.1134/1.1258917
https://doi.org/10.1134/1.1258917
Autor:
B. M. Kostishko, L. I. Gonchar
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 66:382-386
The change produced in the photoluminescence (PL) of n-type porous silicon (por-Si) by irradiation with ultraviolet laser radiation in the presence of an external electric field has been investigated. A field effect, consisting of a large change in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82aa0fcd736a65a075f1e01e3d38d3cb
https://doi.org/10.1134/1.567526
https://doi.org/10.1134/1.567526
Publikováno v:
Technical Physics Letters. 30:259-261
The process of oxidation of the surface of porous silicon in the course of aqueous after-etching has been studied by monitoring the change in the shape of the inverse self-convolution of a SiL23VV peak in the Auger electron spectrum. It was found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642e31fee559d23ee57b3d9de7e3845b
https://doi.org/10.1134/1.1748593
https://doi.org/10.1134/1.1748593