Zobrazeno 1 - 10
of 22
pro vyhledávání: '"B. Lutzer"'
Publikováno v:
Applied Surface Science. 369:377-383
Metal Oxide Semiconductor capacitors are investigated, employing ALD grown Y 2 O 3 as gate dielectric, and n-type (1 0 0) germanium as channel substrate. The effect of post deposition annealing (PDA) in oxygen and forming gas atmosphere using a thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50643dc372a3c9a94b52654be95884fd
https://doi.org/10.1016/j.apsusc.2016.02.066
https://doi.org/10.1016/j.apsusc.2016.02.066
Autor:
Hermann Detz, A. Amsuess, B. Lutzer, Ole Bethge, M. Hummer, Herbert Hutter, Emmerich Bertagnolli, C. Zimmermann, S. Simsek, Michael Stoeger-Pollach
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P387-P392
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3dfb752b47a3ad051f857f501c72def
https://doi.org/10.1149/2.0181509jss
https://doi.org/10.1149/2.0181509jss
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:051802
The resistance of ultrathin metal films (Ag, Au, Cr, Ir, Pt, and Ti) on hydrofluoric acid-treated Si(111) surfaces is investigated during room temperature evaporation at very low deposition rates (0.003–0.006 nm/s). High-resolution in situ measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fccf2f5f0e1fce31ba0577b90ad525
https://doi.org/10.1116/1.5001669
https://doi.org/10.1116/1.5001669
Autor:
B. Lutzer
The CMS collaboration is currently conducting a campaign to identify radiation-hard materials for an upgrade of the CMS tracker. This upgrade is needed to be able to cope with the higher radiation background of the future HL-LHC; additionally the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbdbe5c87860297fb797a2ca7c5ac57d
http://cds.cern.ch/record/1503241
http://cds.cern.ch/record/1503241
Publikováno v:
Semiconductor Science and Technology. 31:075009
The impact of annealing temperature and annealing duration on the interface properties of n-Ge/Y2O3/Pt MOS-capacitors is investigated employing an ultrathin catalytically acting Pt-layer. X-ray photoelectron spectroscopy analysis has been used to ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6899351f0c48b8bfe3444aa53c7487cb
https://doi.org/10.1088/0268-1242/31/7/075009
https://doi.org/10.1088/0268-1242/31/7/075009
Autor:
Emmerich Bertagnolli, C. Zimmermann, Ole Bethge, B. Lutzer, Michael Stoeger-Pollach, S. Simsek
Publikováno v:
Journal of Applied Physics. 119:125304
In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO2 insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ca6d9c86a9738d5afdf7f298d6b874
https://doi.org/10.1063/1.4944803
https://doi.org/10.1063/1.4944803
Autor:
Christoph Henkel, Emmerich Bertagnolli, S. Simsek, Ole Bethge, Jürgen Smoliner, C. Zimmermann, B. Lutzer, Michael Stöger-Pollach
Publikováno v:
Journal of Applied Physics. 116:214111
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcycl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e414e4241f36132ffae125191f09353
https://doi.org/10.1063/1.4903533
https://doi.org/10.1063/1.4903533
ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT Scalability
Publikováno v:
ECS Meeting Abstracts. :2092-2092
The downscaling of the device dimensions in Metal Oxide Semiconductor Transistors (MOSFET) has made necessary the introduction of the high-k metal gate stack. Nowadays, silicon as channel material in MOSFET devices itself is considered as limiting fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a69ca93900e5b0ecab942e54be12893
https://doi.org/10.1149/ma2014-02/44/2092
https://doi.org/10.1149/ma2014-02/44/2092
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