Výsledky vyhledávání

Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

Autor: Jules Girard, B. Lalmi, C. David, Emiliano Pallecchi, Abdelkarim Ouerghi, Sylvain Latil, Mathieu G. Silly, Fausto Sirotti

Publikováno v: Scientific Reports
Scientific Reports, 2014, 4, ⟨10.1038/srep04066⟩
Scientific Reports, Nature Publishing Group, 2014, 4, ⟨10.1038/srep04066⟩

Trilayer graphene is of particular interest to the 2D materials community because of its unique tunable electronic structure. However, to date, there is a lack of fundamental understanding of the properties of epitaxial trilayer graphene on silicon c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::533261432e972b93fb5f4881f89756f2
https://doi.org/10.1038/srep04066

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Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs

Autor: Hocine Khemliche, Maxime Mulier, Mahmoud Eddrief, B. Lalmi, Paola Atkinson, Victor H. Etgens, Maxime Debiossac, Philippe Roncin, A. Momeni

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2014, 105 (2), pp.021602. ⟨10.1063/1.4890121⟩
Applied Physics Letters, American Institute of Physics, 2014, 105 (2), pp.021602. ⟨10.1063/1.4890121⟩

International audience; A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Ener

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00aecbb63543d1ad4f1aaeb074143e3e
https://hal.science/hal-01240512

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Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)

Autor: Claire Mathieu, Sylvain Latil, Tevfik Onur Menteş, B. Lalmi, R. Belkhou, Andrea Locatelli, Abdelkarim Ouerghi, Emiliano Pallecchi

The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and mic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3694932b5d50af8003f2fc140879ac2
http://arxiv.org/abs/1206.2474

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High resolution imaging of superficial mosaicity in single crystals using grazing incidence fast atom diffraction

Autor: Philippe Roncin, A. Momeni, B. Lalmi, P. Soulisse, Hocine Khemliche

Publikováno v: Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter, IOP Publishing, 2012, 24 (44), pp.442002. ⟨10.1088/0953-8984/24/44/442002⟩

International audience; A new table top technique is used to simultaneously analyze the local morphology of crystalline surfaces as well as the misalignment of large scale domains at the topmost surface layer. The approach is based on fast atom diffr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c20e376b884dece5421821b6e4eb759d
https://hal.archives-ouvertes.fr/hal-01417343/document

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EPITAXIAL GROWTH OF GRAPHENE-LIKE SILICON SINGLE LAYER ON A SILVER SURFACE

Autor: J. P. Biberian, B. Aufray, B. Lalmi

Publikováno v: Physics, Chemistry and Applications of Nanostructures.

In close analogy with the catalytic growth of graphene over-layer on several metal surfaces we have grown a two-dimensional silicon sheet in a honeycomb lattice, i.e. in a graphene-like structure, which could be a silicene layer. Two atomic ball mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::afeddafde18508ccb59c3b32ed245e1a
https://doi.org/10.1142/9789814343909_0102

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Photoluminescence studies of stacked InAs/InP quantum sticks

Autor: Olivier Marty, B. Lalmi, Georges Bremond, Bassem Salem, Nicolas Chauvin, Gérard Guillot, Christelle Monat, Michel Gendry, Catherine Bru-Chevallier, Philippe Regreny

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2005, 275 (1-2), pp.e2327-e2331. ⟨10.1016/j.jcrysgro.2004.11.372⟩

International audience; The optical properties of stacked InAs/InP quantum sticks (QSs) are investigated as a function of the spacer layer thickness. The stacked structures are grown by solid source molecular beam epitaxy and studied by photoluminesc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58565ee2f861fa1a3911eaf1a106460e
https://hal.archives-ouvertes.fr/hal-01976042

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High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001)

Autor: Matthieu Chorro, B. Lalmi, R. Belkhou

Publikováno v: Journal of Applied Physics. 114:063505

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6e19c11b84f91ee3a3355227dc69fef
https://doi.org/10.1063/1.4817761

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