Zobrazeno 1 - 10
of 12
pro vyhledávání: '"B. L. Olmsted"'
Publikováno v:
Journal of Electronic Materials. 22:331-334
The composition profile of an (AlAs)1/2(GaAs)1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be35db9e04c77947da370c0953074b34
https://doi.org/10.1007/bf02661386
https://doi.org/10.1007/bf02661386
Publikováno v:
Journal of Crystal Growth. 127:812-815
The composition profile of an (AlAs) 1/2 (GaAs) 1/2 tilted superlattice was determined to be sinusoidal, varying from Al 0.4 Ga 0.6 As to Al 0.6 Ga 0.4 As. The energy and polarization of the direct and indirect band gap photoluminescence were examine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ee6ca433a82c82d30b2e877620875d
https://doi.org/10.1016/0022-0248(93)90738-i
https://doi.org/10.1016/0022-0248(93)90738-i
Autor:
S. N. Houde‐Walter, B. L. Olmsted
Publikováno v:
Applied Physics Letters. 63:1131-1133
We report on a study of the role of defect diffusion from the crystal surface in the disordering of a multiple quantum well structure that was Si‐doped during MBE growth. The distribution of native defects was inferred from correlating the results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd1ee3aad28f7960442a83bcafd08a0
https://doi.org/10.1063/1.110764
https://doi.org/10.1063/1.110764
Autor:
B. L. Olmsted, S. N. Houde‐Walter
Publikováno v:
Applied Physics Letters. 63:530-532
We report on a systematic study of impurity‐free Al‐Ga interdiffusion in AlGaAs/GaAs superlattices in sealed ampoules. Three ambients were explored: along the Ga‐rich solidus, with no excess Ga or As in the evacuated ampoule, and with excess As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::885113af2f3e394f8ef30a31c0b9b1ca
https://doi.org/10.1063/1.109995
https://doi.org/10.1063/1.109995
Autor:
B. L. Olmsted, S. N. Houde‐Walter
Publikováno v:
Applied Physics Letters. 62:1516-1518
We report on a study of disordering by the in‐diffusion of a variety of group IV and VI n‐type impurities. In all cases, the n‐type dopants enhance the Al‐Ga interdiffusion coefficient over that due to the As overpressure alone. The Si‐indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf95f62ddff17308093815f1d2c1e74
https://doi.org/10.1063/1.108625
https://doi.org/10.1063/1.108625
Autor:
B. L. Olmsted, S. N. Houde‐Walter
Publikováno v:
Applied Physics Letters. 60:368-370
The effect of stoichiometry on the Al‐Ga interdiffusion of undoped AlGaAs/GaAs multiple quantum wells is investigated over the full composition range of the GaAs solidus. The 2 orders of magnitude increase observed in the interdiffusion coefficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912c86987f657173b9c268d161abba8b
https://doi.org/10.1063/1.106659
https://doi.org/10.1063/1.106659
Autor:
M. L. Jones, B. L. Olmsted
Publikováno v:
MRS Proceedings. 348
Results of a study of the luminescence of rare earth ions in crystalline thin films grown on reflective substrates will be presented. As an example, the luminescence of Sm2+:CaF2 films has been calculated as a function of the separation between the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c2afc94f13b66e75856f37d24ca41b
https://doi.org/10.1557/proc-348-539
https://doi.org/10.1557/proc-348-539
Autor:
B. L. Olmsted, S. N. Houde-Walter
Publikováno v:
MRS Proceedings. 300
We report on a study of the role of defect diffusion from the crystal surface in the disordering of a multiple quantum well structure that was Si-doped during MBE growth. The distribution of native defects was inferred from correlating the results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e2559b6c5265b2d57f5257ce3308ae5
https://doi.org/10.1557/proc-300-415
https://doi.org/10.1557/proc-300-415
Autor:
B. L. Olmsted, S. N. Houde-Walter
Publikováno v:
MRS Proceedings. 300
We report on a systematic study of impurity-free Al-Ga interdiffusion in AlGaAs/GaAs superlattices in sealed ampoules. Three ambients were explored: along the Ga-rich solidus, with no excess Ga or As in the evacuated ampoule, and with excess As less
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d98c148713f044a98240be73737539
https://doi.org/10.1557/proc-300-391
https://doi.org/10.1557/proc-300-391
Publikováno v:
MRS Proceedings. 262
We report on a study of disordering by the in-diffusion of a variety of Group IV and Group VI n-type impurities. Secondary ion mass spectroscopy, electrochemical C-V profiling, photoluminescence spectroscopy, and cathodoluminescence spectroscopy were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c7554fc9b93a46827e0ab234a6f7c0
https://doi.org/10.1557/proc-262-867
https://doi.org/10.1557/proc-262-867