Zobrazeno 1 - 10
of 18
pro vyhledávání: '"B. Knappenberger"'
Autor:
Danny Jahn, Akbar Ghazinour, C. Trigas, Y. Yin, Hao Li, D. Morgan, B. Knappenberger, D. Scheitlin, James A. Kirchgessner, I. To, M. Huang, P. Welch, M. Tutt, Peter Wennekers, Ralf Reuter, J. Feige, S. Braithwaite, Jay P. John
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa36b1d4936498352365b2cd991ac58c
https://doi.org/10.1109/mwsym.2007.380434
https://doi.org/10.1109/mwsym.2007.380434
Autor:
B. Knappenberger, P.M. Piel, Bruce M. Green, R. Hooper, Olin L. Hartin, Charles E. Weitzel, D. Maurer, M. C De Baca, Paul A. Fisher, Philip H. Li, M. Miller, Ellen Y. Lan
Publikováno v:
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits.
This paper presents a high power density and high efficiency InGaP barrier PHEMT technology for 26 V operation. This device was evaluated for 3G infrastructure applications at 2.14 GHz and WiMAX applications at 3.5 GHz. At 2.14 GHz, under a two carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99d02dd109a6df63db59f8e0ee16482
https://doi.org/10.1109/rfic.2005.1489815
https://doi.org/10.1109/rfic.2005.1489815
Autor:
D. Maurer, Ellen Lan, E.M. Johnson, P. Fisher, Charles E. Weitzel, P. Li, C.A. Gaw, J. Kim, M. Miller, B.M. Green, Lawrence S. Klingbeil, B. Knappenberger, M. CdeBaca, O. Hartin
Publikováno v:
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
This report presents a GaAs pHEMT technology optimized for 26 V drain bias. At this bias, a 2.14 GHz gate width scaling study demonstrates output power densities of 1.8-2.1 W/mm of output power at 1 dB gain compression (P/sub 1dB/) for device sizes r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30dcfb83553c815e1929fcab4e22a827
https://doi.org/10.1109/mwsym.2004.1339090
https://doi.org/10.1109/mwsym.2004.1339090
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
In this paper we present DC, small signal, and power characteristics of an InGaP PHEMT device using InGaP as barrier layer material. A comparison of intrinsic Gm, Rds, Cgs, and Cgd with an AlGaAs PHEMT device showed that the InGaP PHEMT is very promi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd59c496017ef36c18861a7d3d533c8f
https://doi.org/10.1109/mwsym.2002.1011814
https://doi.org/10.1109/mwsym.2002.1011814
Publikováno v:
Paleoceanography. 18
[1] The bulge is a 600-m-thick regional deposit of pelagic sediment accumulated around the equator. Its stratigraphy reflects a number of factors: how accumulation rates have varied over time, how accumulation has been spatially focused around the eq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103778cddb5577d84f9f87bc475b3265
https://doi.org/10.1029/2002pa000828
https://doi.org/10.1029/2002pa000828
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).
The InGaAs PHEMT is attracting good interest as a cost effective, highly reliable power amplifier technology for base station applications. Operating from 12 V supplies, a typical 15 mm device delivers over 40 dBm of saturated power with efficiencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e551c0ffe3600dcd260548179805067
https://doi.org/10.1109/gaas.2000.906294
https://doi.org/10.1109/gaas.2000.906294
Autor:
Albert C. Ludolph, Stefan Liebau, Helge Völkel, Christoph Münch, B Knappenberger, Thomas Meyer
Publikováno v:
Neuroscience letters. 241(1)
The human glutamate transporter EAAT2 (GLT-1) is of major importance for synaptic glutamate reuptake, and reportedly, a candidate gene for neurodegenerative diseases such as amyotrophic lateral sclerosis, Alzheimer's disease and epilepsy. Here we rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::831f654ba2b25f430157d385ff1cc5cf
https://pubmed.ncbi.nlm.nih.gov/9502218
https://pubmed.ncbi.nlm.nih.gov/9502218
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