Zobrazeno 1 - 10
of 68
pro vyhledávání: '"B. K. Patnaik"'
Publikováno v:
Journal of Applied Physics. 86:3576-3583
The interaction of vacancies with 111In atoms is studied in Hg1−xCdxTe compounds via perturbed-angular correlation (PAC) experiments, for x=0.065, 0.21, 0.44, and 0.95. In the low-x (Hg-rich) compounds, Hg vacancies are created by heating in vacuum
Publikováno v:
Journal of Physics: Condensed Matter. 8:2679-2694
The structure and thermodynamics of defects involving ions and charge-compensating silver vacancies in AgBr were studied using perturbed angular correlation (PAC) spectroscopy. We saw two main defect configurations, both attributed to two Ag vacancie
Publikováno v:
Radiation Effects and Defects in Solids. 134:385-388
We have used perturbed angular correlation (PAC) spectroscopy to study the structure and thermodynamic behavior of point defect complexes containing trivalent indium ions in AgBr. When indium atoms are introduced into AgBr they generally substitute f
Publikováno v:
Journal of Applied Physics. 78:1776-1781
Previous perturbed angular correlation (PAC) spectroscopy measurements on the donor indium in CdTe and its alloys have revealed several defect complexes. One defect characterized by two sets of quadrupole interaction parameters, νQ=83 MHz, η=0.08 a
Age-Related Responses of Hepatic Glucose Uptake to Starvation and Cold Stress in Male Garden Lizards
Autor:
B K Patnaik, B.S. Jena
Publikováno v:
Gerontology. 36:262-267
The hepatic glucose uptake of male garden lizards did not change during maturation but showed a decline between middle-aged and old age groups. The decline in glucose uptake following starvation and cold stress was age-dependent, the young and middle
Publikováno v:
Applied Physics Letters. 63:3173-3175
The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation re
Publikováno v:
Applied Physics Letters. 63:1933-1935
In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (
Publikováno v:
MRS Proceedings. 355
Capillary instability poses a serious concern for applicability of thin layers in next generation of microelectronics devices. Two completely independent models, Mullins’ Grain Boundary Grooving model and the Geometrical Agglomeration model have be
Publikováno v:
MRS Proceedings. 373
The influence of in-situ photoexcitation during low temperature implantation on selfinterstitial agglomeration following annaealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage de
Publikováno v:
MRS Proceedings. 309
We have used preamorphization of silicon substrates as a process modification to suppress agglomeration during cobalt disilicide film formation. Planar, continuous and low resistivity (2 layers, acts as a convenient diffusion marker and aids interpre