Zobrazeno 1 - 10
of 79
pro vyhledávání: '"B. K. Jones"'
Autor:
B. K. Jones, John R. Saylor
Publikováno v:
Journal of Atmospheric and Oceanic Technology. 26:2413-2419
The shapes of falling raindrops are often significantly altered by drop oscillations, complicating dual-polarization radar methods that rely on a predictable, monotonic variation of drop axis ratio α with equivolume drop diameter d. This oscillation
Publikováno v:
Review of Scientific Instruments. 73:2422-2427
The measurement of water drops using direct optical imaging involves a tradeoff between the camera depth of field and the accuracy of the measured droplet size. A large depth of field increases the length of that portion of the optical axis that is i
Autor:
G. Trefan, B. K. Jones
Publikováno v:
American Journal of Physics, 69(4), 464-469. American Association of Physics Teachers
A simple electronic circuit is described which can be used in the student laboratory to demonstrate and study nonlinear effects and chaos. The circuit shows the changes to the dynamical properties of the system with respect to three control parameter
Autor:
M McPherson, B K Jones
Publikováno v:
Semiconductor Science and Technology. 14:667-678
From the static current-voltage properties of irradiated silicon p-i-n diodes we develop a semi-quantitative model based on established relaxation semiconductor theory for forward and reverse bias. The properties of such diodes when used as photodiod
Autor:
J. Santana, B. K. Jones
Publikováno v:
Journal of Applied Physics. 83:7699-7705
It is shown that semi-insulating GaAs diodes exhibit all the qualitative electrical properties expected from a relaxation semiconductor. The degree of ideality increases after irradiation by neutrons for liquid encapsulated Czochralski and liquid pha
Publikováno v:
Semiconductor Science and Technology. 12:1187-1194
The effects of radiation damage in two silicon p - i - n photodiodes fabricated from high resistivity material have been studied. The devices have been irradiated by 1 MeV neutrons to three different fluences up to . Current, capacitance and charge m
Autor:
Gongjiu Jin, B. K. Jones
Publikováno v:
Journal of Applied Physics. 80:6340-6348
In a GaAs field effect transistor there are ungated sections of the channel between the gate and the source/drain. The static characteristics and the transients which occur in various parameters after a change in the bias voltages can be shown to be
Publikováno v:
Journal of Applied Physics. 79:3611-3618
The dc, steady state charge transport in 200‐μm‐thick semi‐insulating GaAs samples with two large whole area metal contacts is calculated numerically. The material is assumed to have shallow donors and an excess of deep acceptors. The distribu
Autor:
B. K. Jones, Y. Z. Xu
Publikováno v:
Review of Scientific Instruments. 66:4676-4680
A description is given of the design, implementation, and performance of a circuit to measure the electrical properties of resistive specimens of about 10 Ω such as are used in electromigration studies. The ac bridge can measure the changes in resis
Publikováno v:
Journal of Mechanical Design. 117:215-220
Explosive values are generally composed of a tapered plunger which is explosively driven along the bore of a cylindrical housing and forced to stop at a location designed to alter a particular fluid flow configuration. The stopping point of the plung