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pro vyhledávání: '"B. Johs"'
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Publikováno v:
Thin Solid Films. :645-649
Etch depth into bulk Si wafers was determined in real time using spectroscopic ellipsometry (SE). The mechanism that allows this is lateral interference, produced by patterning. For a pattern period much larger than an optical wavelength, diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba05f15430485297a9b3974df93f3c6f
https://doi.org/10.1016/j.tsf.2004.01.034
https://doi.org/10.1016/j.tsf.2004.01.034
Publikováno v:
Journal of Electronic Materials. 30:637-642
Spectroscopic ellipsometry (SE) has proven to be a very reliable technique for the in-situ monitoring of the substrate temperature and alloy composition during the HgCdTe epitaxy. In this work, the influence of the variations in the angle of incidenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b72fd0de2a01c8abf971dd2595827b
https://doi.org/10.1007/bf02665848
https://doi.org/10.1007/bf02665848
Publikováno v:
Journal of Applied Physics. 89:2779-2785
The pseudodielectric function spectra 〈e〉 of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fa69f0982abf31d94fd545a2f85b7d
https://doi.org/10.1063/1.1342022
https://doi.org/10.1063/1.1342022
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:775-781
Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28018b95fb052a6ffda1e72f0333830c
https://doi.org/10.1557/s1092578300005068
https://doi.org/10.1557/s1092578300005068
Autor:
John A. Roth, J. E. Jensen, Rajesh D. Rajavel, D. M. Jamba, B. Johs, Gregory L. Olson, Peter D. Brewer
Publikováno v:
Journal of Electronic Materials. 28:749-755
We describe an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux during molecular beam epitaxial growth of HgCdTe epilayers for advanced IR detectors. Subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3187432f00eb7f0e26a551c66ad5ebd5
https://doi.org/10.1007/s11664-999-0065-3
https://doi.org/10.1007/s11664-999-0065-3
Publikováno v:
Journal of Crystal Growth. :31-35
The use of a multiple-sensor control system to regulate in real-time the growth of thick, lattice-matched epitaxial films of InGaAs and InAlAs on InP substrates is described. The application of transmission-mode absorption-edge spectroscopy for in si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437e687f0881b038130c2cd07d6d2dcc
https://doi.org/10.1016/s0022-0248(98)01271-8
https://doi.org/10.1016/s0022-0248(98)01271-8
Autor:
J. E. Jensen, K. Kosai, Eli E. Gordon, M. D. Jack, W. B. Johnson, George R. Chapman, T. J. de Lyon, B. Walker, Bonnie A. Baumgratz, O. K. Wu, W. Larsen, B. Johs, Gregory L. Olson, M. Sen, Andrew T. Hunter
Publikováno v:
Journal of Crystal Growth. :980-984
Molecular-beam epitaxy (MBE) has been utilized to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 μm spectral range, as an alternative technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24187ec7aac3130faf160e68183a400
https://doi.org/10.1016/s0022-0248(98)01506-1
https://doi.org/10.1016/s0022-0248(98)01506-1
Publikováno v:
Journal of Electronic Materials. 27:500-503
The implementation of a feedback control system for maintaining a desired compositional value in Hg1−xCdxTe epilayers is reported. An 88-wavelength ellipsometer monitored the Cd content (x) of a Hg1−xCdxTe film during molecular beam epitaxy, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8982e7f9b95745a67c49e4d1522437
https://doi.org/10.1007/s11664-998-0004-8
https://doi.org/10.1007/s11664-998-0004-8
Publikováno v:
Journal of Applied Physics. 83:3323-3336
Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopic ellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data sets acquired at multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dbf18f900892100b667c741189dd8c2
https://doi.org/10.1063/1.367101
https://doi.org/10.1063/1.367101