Self-Assembled Molecular Nanowires for High-Performance Organic Transistors

Autor: B. J. Villis, James E. Stott, Gabriel Aeppli, Sandrine Heutz, Luke Fleet, Arokia Nathan, Michele Serri, Salahud Din

Publikováno v: ACS applied materialsinterfaces. 9(24)

While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors-the fundamental building block-is rather limited as their speed and reliability are not competiti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bc72a11c45e7ebd7f8aa48a9812beab
https://pubmed.ncbi.nlm.nih.gov/28547994

Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

Autor: N. Stavrias, Chennupati Jagadish, Jennifer Wong-Leung, Brett C. Johnson, J. E. Burgess, Jeffrey C. McCallum, B. J. Villis, James Williams, Supakit Charnvanichborikarn

Publikováno v: physica status solidi (a). 208:620-623

The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition betwe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::761ebb8a68cec548b8ec7cbc3c766081
https://doi.org/10.1002/pssa.201000380

Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out

Autor: Konstantin Litvinenko, Britta Redlich, Gabriel Aeppli, Juerong Li, B. N. Murdin, C. R. Pidgeon, A. F. G. van der Meer, B. J. Villis, M. Pang, Guy Matmon, N. Stavrias, P. T. Greenland, E. T. Bowyer, Russell M. Gwilliam

Publikováno v: Nature Communications, 6
Nature Communications

The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46ab2e0892e3834caa5ea222c5c06158
http://hdl.handle.net/2066/144916

Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

Autor: Xavier Jehl, Sylvain Barraud, B. J. Villis, Alexei O. Orlov, Gregory L. Snider, Patrick Fay, Marc Sanquer, Maud Vinet

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2014, 104 (23), pp.233503
Applied Physics Letters, American Institute of Physics, 2014, 104 (23), pp.233503

The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individua

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6cd7c7713829d06c053526efc1c399b
https://hal.univ-grenoble-alpes.fr/hal-02009699

Comparison between implanted boron and phosphorus in silicon wafers

Autor: James Williams, Brett C. Johnson, J. E. Burgess, Jeffrey C. McCallum, Jennifer Wong-Leung, Supakit Charnvanichborikarn, B. J. Villis

Publikováno v: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices.

The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73a6ea9c2d33f1cd4115ccedd623faf3
https://doi.org/10.1109/commad.2010.5699752