Zobrazeno 1 - 2
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pro vyhledávání: '"B. J. Shemanski"'
Autor:
J.T. McGuire, J.J. Wortman, B. J. Shemanski, M.A. George, G.A. Hames, David Arthur Bohling, W.A. Lanford, Scott Edward Beck
Publikováno v:
Proceedings of 1994 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC).
The effects of different levels of water, nitrogen, and methane contamination in an oxidation ambient during the production of ultra-thin rapid thermal oxides have been investigated. Careful characterization of the oxidation and argon anneal steps ha
Publikováno v:
MRS Proceedings. 318
Ultrathin rapid thermal oxides have been formed in oxygen with varying levels of nitrogen incorporated into the oxidation ambient. Metal-oxide-semiconductor capacitors and MOSFET devices were subsequently fabricated and tested. Device reliability was