Zobrazeno 1 - 10
of 35
pro vyhledávání: '"B. J. Sealy"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8dd3412b211996e7032dd141fbaf3d
https://doi.org/10.1201/9781003069621-51
https://doi.org/10.1201/9781003069621-51
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a6318cc82c943c48f309dd5b36f0b4
https://doi.org/10.1201/9781003069614-28
https://doi.org/10.1201/9781003069614-28
Publikováno v:
Journal of Applied Physics. 82:4800-4804
Electronic properties of silicon rich amorphous silicon alloys were investigated using diode structures and thin films on Corning 7059 glass following the implantation of 1 MeV Ge+ ions with doses up to 2.4×1015 ions/cm2. Optical absorption measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c0ad9c042f9dc7adf7713df1f2ca16
https://doi.org/10.1063/1.366338
https://doi.org/10.1063/1.366338
Publikováno v:
Applied Physics Letters. 76:715-717
Amorphous disilicides of the refractory metals chromium and molybdenum have been formed at room temperature in hydrogenated amorphous silicon. The silicides are produced by radiation-enhanced diffusion during bombardment through a thin metal film on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f783f401de4b50007932572d2fd0a3
https://doi.org/10.1063/1.125871
https://doi.org/10.1063/1.125871
Autor:
A. J. Smith, S. H. Yeong, B. Colombeau, B. J. Sealy, R. M. Gwilliam, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Vacancy Engineering has previously been shown to be highly efficient in improving the junction properties of a p‐type boron implant. This study examines the effect of a Vacancy Engineering Implant (VEI) prior to a low‐energy n‐type phosphorous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb5ffc2aa8aa32c5df2cfb382986d23
https://doi.org/10.1063/1.3033643
https://doi.org/10.1063/1.3033643
Autor:
A. J. Smith, L. D. Antwis, S. H. Yeong, A. P. Knights, B. Colombeau, B. J. Sealy, R. M. Gwilliam, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
This study examines the effect of a silicon Vacancy Engineering Implant (VEI) on a boron doped ultra‐shallow junction, in terms of sheet resistance, junction depth and for the first time junction leakage—via conventional diode measurements and ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::784488c79017a3e0c2a1fff53ed50788
https://doi.org/10.1063/1.3033600
https://doi.org/10.1063/1.3033600
Autor:
S. J. Pearton, Nancy M. Haegel, Kevin S. Jones, A. E. Von Neida, N. Morris, William Scott Hobson, B. J. Sealy
Publikováno v:
Journal of Applied Physics. 67:2396-2409
The electrical activation characteristics of implanted Be, Mg, Si, and S in AlxGa1−xAs (x=0–1) were investigated as a function of ion dose for rapid annealing in the range 600–950 °C. The apparent activation energy for electrical activity of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe28b4d96b7c805623d591fdfe7dace
https://doi.org/10.1063/1.345542
https://doi.org/10.1063/1.345542
Publikováno v:
Journal of Applied Physics. 67:307-311
The effects of subsequent heat treatments on the electrical properties of ion‐implanted layers in GaAs have received little attention. This is of paramount importance as far as both the industrial applications and the understanding of the physics b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21bc75dd8813650e471b19ef27d97fe6
https://doi.org/10.1063/1.345253
https://doi.org/10.1063/1.345253
Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are investigated using computer modeling for amorphous silicon transistors operated at high current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ecd3da0873afe9308ba19f76e976644
https://surrey.eprints-hosting.org/12/
https://surrey.eprints-hosting.org/12/