Zobrazeno 1 - 10
of 18
pro vyhledávání: '"B. J. Ohlsson"'
Autor:
Zhe Ren, Lars Samuelson, Yen-Po Liu, Maryam Khalilian, Sofie Yngman, B. J. Ohlsson, Anders Mikkelsen, Rainer Timm, Dan Hessman, Filip Lenrick
Publikováno v:
Review of Scientific Instruments. 90:103703
GaN nanowires are potential candidates for use in scanning probe microscopy due to their well-defined, reproducible, geometric shapes, their hardness, and their light guiding properties. We have developed and investigated probes for high resolution a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eddc9a0296cc7ba30155aaa6148ecaed
https://doi.org/10.1063/1.5122791
https://doi.org/10.1063/1.5122791
Autor:
Lars Samuelson, Lars-Erik Wernersson, Thomas Mårtensson, Truls Löwgren, C. Rehnstedt, Philippe Caroff, Linus Fröberg, Claes Thelander, Erik Lind, B. J. Ohlsson
Publikováno v:
IEEE Transactions on Electron Devices. 55:3030-3036
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985c69f9b18f2f423113056eebbac86a
https://doi.org/10.1109/ted.2008.2005151
https://doi.org/10.1109/ted.2008.2005151
Publikováno v:
Journal of Crystal Growth. 272:167-174
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (I 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df6d76897d878600355a6bd71a6b765c
https://doi.org/10.1016/j.jcrysgro.2004.08.106
https://doi.org/10.1016/j.jcrysgro.2004.08.106
Autor:
Claes Thelander, Mikael Björk, Niklas Sköld, N. Panev, Lars Samuelson, Knut Deppert, L.R Wallenberg, Magnus Larsson, B J Ohlsson, Ann Persson
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:560-567
Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is ofte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c2cde5f2f46c4eb8c10dc5707f371e
https://doi.org/10.1016/j.physe.2003.11.072
https://doi.org/10.1016/j.physe.2003.11.072
Publikováno v:
Nanotechnology. 14:1255-1258
We report on a method of synthesizing arrays of individually seeded nanowires. An electron beam lithography and metal lift-off method was used to pattern InP(111)B substrates with catalysing gold particles. Vertical InP(111)B nanowire arrays were the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29aac64710731e2d6e474914a5477179
https://doi.org/10.1088/0957-4484/14/12/004
https://doi.org/10.1088/0957-4484/14/12/004
Autor:
Martin Magnusson, B. J. Ohlsson, Ann Persson, Lars Samuelson, Claes Thelander, Knut Deppert, L.R Wallenberg, Mikael Björk
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1126-1130
Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fddcfb49a5a84330405968e425a594af
https://doi.org/10.1016/s1386-9477(02)00318-1
https://doi.org/10.1016/s1386-9477(02)00318-1
Publikováno v:
Journal of Crystal Growth. 209:454-458
GaP/Si heterojunction diodes have been fabricated on (1 1 1) Si. The diodes were electrically and optically characterized. The conduction band offset has been measured and analyzed. The heterostructures showed good diode IV characteristics with a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::924826e618a0e8362641b782e276d5d9
https://doi.org/10.1016/s0022-0248(99)00597-7
https://doi.org/10.1016/s0022-0248(99)00597-7
Autor:
Werner Seifert, Magnus T. Borgström, Magnus Larsson, Lars Samuelson, U. Krishnamachari, N. Panev, B. J. Ohlsson, L. R. Wallenberg
Publikováno v:
Applied Physics Letters. 85:2077-2079
We report on [001]InP nanowires grown by metalorganic vapor phase epitaxy directly on (001)InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfc346e3d8dc9f987ebf49d2982c449
https://doi.org/10.1063/1.1784548
https://doi.org/10.1063/1.1784548
Autor:
Lars Samuelson, Claes Thelander, Magnus Larsson, Thomas Mårtensson, B J Ohlsson, L. R. Wallenberg, Mikael Björk
Publikováno v:
Applied Physics Letters. 83:2052-2054
Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2dc7728d86e004933d820a6545fd5f1
https://doi.org/10.1063/1.1606889
https://doi.org/10.1063/1.1606889
Autor:
Knut Deppert, Mikael Björk, B. J. Ohlsson, Claes Thelander, L. R. Wallenberg, Lars Samuelson, Ann Persson
Publikováno v:
Applied Physics Letters. 81:4458-4460
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf5af0d94aafc428aaa57b907ae2350
https://doi.org/10.1063/1.1527995
https://doi.org/10.1063/1.1527995