Zobrazeno 1 - 10
of 12
pro vyhledávání: '"B. J. Mulvaney"'
Publikováno v:
Journal of Electrical and Computer Engineering, Vol 2011 (2011)
A new computational technique for distortion analysis of nonlinear circuits is presented. The new technique is applicable to the same class of circuits, namely, weakly nonlinear and time-varying circuits, as the periodic Volterra series. However, unl
Externí odkaz:
https://doaj.org/article/d663f357c50d4e6c95b7534928c1f4d3
Publikováno v:
Computer Methods in Applied Mechanics and Engineering. 181:451-466
In this paper, we present a new technique, based on a continuation method, for oscillator analysis using harmonic balance. With the use of Krylov subspace iterative linear solvers, harmonic balance has become a very powerful method for the analysis o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f469478d9fbc519ac45767d30b31241
https://doi.org/10.1016/s0045-7825(99)00184-x
https://doi.org/10.1016/s0045-7825(99)00184-x
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 11:487-496
A three-dimensional process simulator in which both the standard nonlinear diffusion model and a five-species kinetic model are implemented to model phosphorus diffusion in silicon is described. The reaction-diffusion equations are discretized using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0028fd30eca92fe8b739f463f2310750
https://doi.org/10.1109/43.125096
https://doi.org/10.1109/43.125096
Autor:
J. C. Norberg, B. J. Mulvaney, K. H. Park, Sanjay K. Banerjee, T. C. Smith, Shubneesh Batra, G. Lux, J. K. Elliott, C. L. Kirschbaum
Publikováno v:
Journal of Electronic Materials. 21:227-231
Grain microstructure has a major impact on diffusion of P in polysilicon-on-single crystal silicon systems both within the polysilicon layer and inside the single crystal silicon substrate. During annealing, P diffuses very rapidly along grain bounda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dfbad338b54891f60f145ac3b7b3de0
https://doi.org/10.1007/bf02655841
https://doi.org/10.1007/bf02655841
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The authors present a framework for modeling anomalous diffusion during postimplant rapid thermal annealing. The model combines a detailed Monte Carlo calculation of the buildup of damage to the silicon substrate during the implant with a new kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8713565ba735b261be6120949ca9df91
https://doi.org/10.1109/iedm.1988.32894
https://doi.org/10.1109/iedm.1988.32894
Publikováno v:
SPIE Proceedings.
This paper presents an approach for noise characterization of read-out circuits for CMOS image sensors in frames of transient noise analysis. It provides computation of the complete probabilistic characterization of such circuits. The method is effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7122b1ac973220f592dedcaf55f23442
https://doi.org/10.1117/12.463477
https://doi.org/10.1117/12.463477
Publikováno v:
DATE
A new method for computation of timing jitter in a PLL is proposed. The computational method is based on the representation of the circuit as a linear time-varying system with modulated stationary noise models, spectral decomposition of stochastic pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3d150ecb0d2a0f9c8d4249cf3702460
https://doi.org/10.1145/343647.343794
https://doi.org/10.1145/343647.343794
Autor:
B. J. Mulvaney, W. B. Richardson
Publikováno v:
Journal of Applied Physics. 67:3197-3199
A previous model for phosphorus diffusion in silicon [J. Appl. Phys. 65, 2243 (1989)] is extended to include four additional reactions among substitutional phosphorus, silicon self‐interstitials, vacancies, and phosphorus‐defect pairs. All reacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009ffabd3ffd4a0ec90e9ef2a449cc0e
https://doi.org/10.1063/1.345405
https://doi.org/10.1063/1.345405
Autor:
W. B. Richardson, B. J. Mulvaney
Publikováno v:
Journal of Applied Physics. 65:2243-2247
A new nonequilibrium kinetic model for phosphorus diffusion in silicon is presented. Concentrations of charged defects and defect‐impurity pairs are determined explicitly by solving a system of quasilinear evolution equations, each of a drift‐dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06cf141602d82a363548beee66319213
https://doi.org/10.1063/1.342836
https://doi.org/10.1063/1.342836
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 8:336-349
PEPPER is a computer program that simulates in one dimension the ion implantation, diffusion, oxidation, epitaxy, deposition, and etch processes used in VLSI technology. The program contains an efficient Monte Carlo ion implantation algorithm that in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdc2396001d71bd557674fe3d72f94b
https://doi.org/10.1109/43.29588
https://doi.org/10.1109/43.29588