Zobrazeno 1 - 10
of 23
pro vyhledávání: '"B. Ilge"'
Publikováno v:
Microelectronic Engineering, 46(1-4), 133-136
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. First, we have fabricated Co/Si metal lines on Si(100) surfaces by UHV-STM based nanolithography on a monohydride passivation layer. The STM tip was used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cd8a500ad3537d7f86dfc6f99fdfa71
https://doi.org/10.1016/s0167-9317(99)00035-0
https://doi.org/10.1016/s0167-9317(99)00035-0
Publikováno v:
Applied Surface Science. :543-547
Nucleation and growth of submonolayer Co coverage on H-passivated Si(100) surfaces was studied in situ by UHV-STM. Non-epitaxial Co islands are formed after room temperature deposition of Co on H–Si(100); the island number density grows with Co cov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e3ae8db5b183748f3fb4883bf9d19f
https://doi.org/10.1016/s0169-4332(98)00863-0
https://doi.org/10.1016/s0169-4332(98)00863-0
Publikováno v:
Journal of Applied Physics, 85(3), 1907-1910. AMER INST PHYSICS
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8df959fa4e65ea478c1261571cf47b5a
https://research.rug.nl/en/publications/06a7262a-dbbd-4fa0-9a30-e885d3ea0ee7
https://research.rug.nl/en/publications/06a7262a-dbbd-4fa0-9a30-e885d3ea0ee7
Publikováno v:
Surface Science. 369:313-320
By means of atomic force microscopy, we have investigated the surfaces of SrTiO 3 (001) substrates (used for the growth of high- T c superconducting films) after different heat treatments. These treatments were (i) annealing in O 3 , (ii) annealing i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9211c2d62ca301e3eea6b57f49e6b3
https://doi.org/10.1016/s0039-6028(96)00897-7
https://doi.org/10.1016/s0039-6028(96)00897-7
Publikováno v:
Physical Review Letters. 76:4765-4768
axis islandsare observed to nucleate predominantly along the surface steps. The heights of the nucleationislands are examined and a consistent layer stacking model is proposed. Cation stoichiometry ofthe nucleation islands is inferred to be dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc5eb9d373949b7ddba493ee4a6a1b4
https://doi.org/10.1103/physrevlett.76.4765
https://doi.org/10.1103/physrevlett.76.4765
Autor:
W.J.A.M. Peterse, F. Tuinstra, B. Stäuble-Pümpin, Chresten Træholt, B. Ilge, J.G. Wen, H.J. Venvik, V.C. Matijasevic, D.S. Wai, P.M.L.O. Scholte, J.E. Mooij, Henny W. Zandbergen
Publikováno v:
Physical Review B. 52:7604-7618
The growth mechanisms of coevaporated SmBa{sub 2}Cu{sub 3}O{sub {ital y}} (Sm123) films grown epitaxially on {l_angle}100{r_angle} SrTiO{sub 3} substrates were investigated using scanning probe microscopy, transmission electron microscopy, scanning e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4462f18795686df9ed24f1b893653274
https://doi.org/10.1103/physrevb.52.7604
https://doi.org/10.1103/physrevb.52.7604
Autor:
B. Ilge, L. J. Geerlings, Marc R. Zuiddam, E. van der Drift, Georgios Palasantzas, Sven Rogge
Publikováno v:
Microelectronic Engineering, 41(10)
This article reports on the technology to link atomic scale structures to macroscopic contact pads. Dedicated processes for electrode pattern formation in several materials have been developed and characterised. For pattern formation in CoSi2 a therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61f616ba86e92a0bddab21c258b9e532
https://research.rug.nl/en/publications/b412f004-1a96-4913-9e5d-a4dac20803a5
https://research.rug.nl/en/publications/b412f004-1a96-4913-9e5d-a4dac20803a5
Publikováno v:
Surface Science, 412(1). ELSEVIER SCIENCE BV
We investigate the diffusion, nucleation and annealing behaviour of Co on H-passivated Si(100) surfaces by scanning tunneling microscopy (STM). Due to the absence of nucleation sites for silicide formation, the nucleation and growth mode is dominated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a93acb45cd9d1e243712c3bb84e1ccf0
https://research.rug.nl/en/publications/0eab5786-078f-42bb-9258-6602fa5feb38
https://research.rug.nl/en/publications/0eab5786-078f-42bb-9258-6602fa5feb38
Publikováno v:
Surface Science, 414(1). ELSEVIER SCIENCE BV
The solid-phase reaction of 5 A of Co with the Si (111) surface is investigated by scanning tunneling microscopy (STM) in the range from room temperature to 700 °C. Room-temperature deposition leads to a granular film surface. The small grains trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3afa6e0c0e9ff7a02e189f7ab3698840
https://research.rug.nl/en/publications/00feffcd-b617-4a25-a2f1-6e90359f4e74
https://research.rug.nl/en/publications/00feffcd-b617-4a25-a2f1-6e90359f4e74
Autor:
H.M. Appelboom, F. Tuinstra, B. Ilge, B. Stäuble-Pümpin, V.C. Matijasevic, J.G. Wen, P.M.L.O. Scholte, J. Venvik, Henny W. Zandbergen, W.J.A.M. Peterse, J.E. Mooij
Publikováno v:
Scopus-Elsevier
Co-evaporated SmBa 2 Cu 3 O y thin films were investigated by means of Scanning Tunnelling Microscopy (STM), x-ray diffraction and Transmission Electron Microscopy (TEM). All films were predominantly oriented with their c -axis perpendicular ( c ⊥)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62f7dd45785df4763f1ff12b16e2747
https://doi.org/10.1016/0921-4534(94)91563-6
https://doi.org/10.1016/0921-4534(94)91563-6